SF60AG ZSELEC | Alldatasheet
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! Lo w Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability M ec h a n i c a l D a t a C ! Ca s e : M o l d e d P l a s t i c D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 1.2 grams (approx.) ! Mounting Position: Any ! Marking: Type Number Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 1 of 2 ! Lead Free: For RoHS / Lead Free Version Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com A SUPERF AST GLASS PASSVITED RECTIFIER6.0 Gl ass Passivated Die Construction DO-201 AD Dim M in Max A B C 1. D 5.0 5. All Di mensions in mm A 24.5 — B 7.20 9. C 10 1. D C haracteristic pF P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 V RM S Reverse Voltage VR(RM S) 35 70 105 140 210 280 420 V A v erage Rectified Output Current @T L = 120° C I O 6.0 A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage @I F = 6.0A V FM 0. 95 1.30 1.7 V P e a k R e v e r s e C u r r e n t @ TA = 25° C At Rated DC Blocking Voltage @T A = 100 °C IRM 2.0 500 µA Revers e Recovery Time (Note 1) trr 35 nS T ypical Junction Capacitance (Note 2) Cj T ypical Thermal Resistance (Note 3) R/G01JL 35 ° C/W Operat ing and Storage Temperature Range Tj, TSTG -55 to +150 ° C 100 60 SF60AG – SF60JG SF60AG – SF60JG SF6 0AGSymbol UnitSF6 0BG SF6 0CG SF6 0EGSF6 0DG SF6 0GG SF6 0JG
I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OFCYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 8.3ms singlehalf sine-wave 50V DC Approx 50 NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 100 1000 1 10 100 C ,CAP ACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T , AMBIENT TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve A ° SF60AG-SF60DG SF60EG-SF60JG 2 of 2 V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0 50 100 150 I , A VERAGE FORWARD CURRENT (A)(AV) 0.01 1.0 2.0 0.6 0.8 1.0 1.2 1.4 I ,INST ANTANEOUS FORWARD CURRENT (A)F T =25 Cj ° Pulse width= 300 sm SF60AG-SF60DG SF60EG-SF60GG SF60JG SF60AG – SF60JG SF60AG – SF60JG