SF505 DSK | Alldatasheet
Document overview
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Technical content
10.2± 0.2 2.8± 0.1 19.0± 0.5 PIN 3.5± 0.3 0.9± 0.1 5.0± 0.1 13.8± 0.5 2.6± 0.2 0.5± 0.1 8.9± 0.2 1.4± 0.2 4.5± 0.2 φ 3 .8 ± 0 . 1 5
FEATURES
Case:JEDEC TO-220A C,molded plastic Term inals: Solderable per MIL- STD-750,Method 2026 Polarity: As marked Weight: 0.06 4 ounces,1.96 gram Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. SF SF SF SF SF UNITS Maximum recurrent peak reverse voltage V RRM V Maximum RMS voltage V RMS V Max imum DC bloc king v oltage V DC V Maximum average forw ard rectified current C =100 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 5.0A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =150 Maximum reverse recovery time (Note1) t rr ns Operating junction temperature range T J Storage temperature range T STG The plastic material carries U/L recognition 94V-0 NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. A I R I FSM 250 500 A 5.0 10.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SF505- - - SF560 A SUPER FAST RECTIFIERS VOLTAGE RANGE: 50 --- 600 V CURRENT: 5.0 A TO-220A C Easily cleaned with alcohol,Isopropanol and sim ilar s olvents I F(AV) 5.0 SF 505 510 520 530 540 560 - 55 ----- + 150 0.9 8 35 70 140 210 280 420 50 100 200 300 400 600 1.3 1. 7 50 100 200 300 400 600 - 55 ----- + 150 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
0.01 0.1 100 Tj=25 C Pulse Width=300 s 1% Duty Cycle o SF505~SF530 SF540 SF560 TJ =125℃ 8.3ms Single Half Sine-Wave 24 1081 0040 60 80 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.4-FORWORD DERATING CURVE CASE TEMPERATURE, AVERAGE FORWARD CURRENT PEAK FORWARD SURGE CURRENT AMPERES AMPERES SF505 - - - SF560 FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC INSTANTANEOUS FORWARD VOLTAGE, VOLTS z SET TIME BASE FOR 15 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIM E =10ns M AX.SOURCE IMPEDANCE=50 FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- PEAK FORWARD SURGE CURRENT -1.0A -0.25A +0.5A t rr 1cm PULSE GENERATOR (NOTE2) D.U.T. NONIN- DUCTIVE N N1 . OSCILLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) 0 25 50 75 100 125 150 Single Phase Half Wave 60H Z Resistive or Inductive Load 175 1.0 2.0 3.0 4.0 5.0 6.0 NUMBER OF CYCLES AT 60Hz www.diode.kr Diode Semiconductor Korea