SF31G-SF38G HDSEMI | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

o 3.0A

  • VRRM 50V-600V
  • High surge current capability

Applications

  • Rectifier Marking Polarity: Color band denotes cathode SF3XG X:From 1 to 8 DO-2 DO-27 Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode SF31G THRU SF38G Glass passivated chip ● Item Symbol Unit Conditions SF3 1G 2G 3G 4G 5G 6G 7G 8G Repetitive Peak Reverse Voltage V RRM V 50 100 150 200 300 400 500 600 Average Forward Current I F(AV) A 60Hz Half-sine wave, Resistance load, Ta=75℃ 3.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 125 Junction Temperature T J -55~+150 Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified) Item Symbol Unit Test Condition SF3 1G 2G 3G 4G 5G 6G 7G 8G Peak Forward Voltage V FM V I FM =3.0A 0.95 1.3 1.7 Peak Reverse Current I RRM1 μA V RM RRM Ta=25℃ 5 I RRM2 Ta=125℃ 150 Reverse Recovery time t rr ns I F =0.5A I R =1A I RR =0.25A 35 Thermal Resistance(Typical) R θJ-A /W℃ Between junction and ambient 30 Typical junction capacitance Cj pF Measured at 1MHZ and Applied Reverse V oltage of 4.0 V .D.C. 80 70

H igh Diode Semiconductor FIG.4:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 12 1 0 2 0 100 100 150 175 1. 5 2. 25 100 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A S ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length Ta (℃) 0. 75 3. 0 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.2 0.1 0.2 0.4 1.0 2.0 4.0 VF(V) SF31G-SF34G SF35G-SF36G SF37G-SF38G Ω 22 =10 Ω 10Ω 50Ω (+) (-) (+) (-) +0.5 -1.0 -0.25 FIG.5: Diagram of circuit and Testing wave form of reverse recovery time

H igh Diode Semiconductor DO-2 Unit: in inches (millimeters) MIN 0.96(24.5) MIN 0.96(24.5)

H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers