SF21 HDSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
o
- VRRM 50V-600V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode SF2X X:From 1 to 8 Super Fast Recovery Rectifier Diode SF21 THRU SF28 Item Symbol Unit Test Condition Peak Forward Voltage V FM V I RRM1 Ta=25℃ 5 Peak Reverse Current I RRM2 μA V RM RRM Ta=125℃ 50 Reverse Recovery time t rr ns I F =0.5A I R =1A I RR =0.25A R θJ-A Between junction and ambient Thermal Resistance(Typical) R θJ-L /W℃ Between junction and lead 1.25 1.7 SF 0.95IFM=2.0A 21 22 23 24 25 26 27 28 Item Symbol Unit I F(AV) I FSM I 60Hz Half-sine wave, Resistance load, Ta=50℃ 60Hz Half-sine wave,1 cycle, Ta=25℃ SF 21 22 23 24 25 26 27 28 50 100 150 200 300 400 500 600 2.0 70 105 140 210 280 350 42035 V RMS V Maximum RMS Voltage
H igh Diode Semiconductor V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time FIG.4:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.375''(9.5mm) Lead Length 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A Ta (℃) 100 0.5 1.0 1.5 2.0 IFSM(A) Number of Cycles FIG.2 : MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 12 4 6 8 1 0 2 0 100 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 VF(V) SF27-SF28 SF25-SF26 SF21-SF24
H igh Diode Semiconductor DO-1 5 DIA Unit: in inches (millimeters) DIA 1.0(25.4) MIN 1.0(25.4) MIN
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers