SF2001G THINKISEMI | Alldatasheet

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Technical content

Features

¬ Low forward voltage drop ¬ Fast switching for high efficiency ¬ High current capability ¬ Case: TO-220AB Heatsink ¬ High surge current capability ¬ Weight: 2.24 gram approximately ¬ Polarity: As marked on body method 208 ¬ Mounting position: Any ¬ Terminals: Solderable per MIL-STD-202 Mechanical Data ¬ Low reverse leakage current Temperature Range (1) Reverse recovery test conditions I F = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. ¬ Epoxy: UL 94V-0 rate flame retardant .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) TO-220AB Unit : inch (mm) SF2001G thru SF2008G Pb Free Plating Product SF2001G thru SF2008G

20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2 Positive Negative Doubler Common Cathode Case Case Case Common Anode Series Connection Suffix "A" Suffix "D" "A"Common Anode Suffix "D"Anode and Cathode Coexistence Suffix Common Cathode SF2001G SF2001GA SF2001GD SF2002G SF2002GA SF2002GD SF2004G SF2004GA SF2004GD SF2005G SF2005GA SF2005GD SF2006G SF2006GA SF2006GD SF2008G SF2008GA SF2008GD

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0.01 0 50 100 150 CASE TEMPERATURE, o C INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 125 150 175 200 1 10 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100

60 Hz Resistive or

Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2 SF2001G thru SF2008G SF2001G-SF2004G SF2005G-SF2007G SF2008G SF2001G-SF2004G SF2005G-SF2008G