SF1601G_V01 TSC | Alldatasheet
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Technical content
SF1601G – SF1608G Taiwan Semiconductor
1 Version: I2104
16A, 50V - 600V Super Fast Rectifier
FEATURES
- AEC-Q101 qualified available
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- RoHS Compliant
- Halogen-free according to IEC 61249-2-21
APPLICATIONS
- DC to DC converters
- Switching mode converters and inverters
- Freewheeling application MECHANICAL DATA
- Case: TO-220AB
- Molding compound meets UL 94V-0 flammability rating
- Terminal: Matte tin plated leads, solderable per J-STD-002
- Mounting torque: 0.56 N⋅m maximum
- Meet JESD 201 class 2 whisker test
- Polarity: As marked
- Weight: 1.82g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF 16 A VRRM 50 - 600 V IFSM 125 A TJ MAX 150 °C Package TO-220AB Configuration Dual dies TO-220AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL SF 1601G SF 1602G SF 1603G SF 1604G SF 1605G SF 1606G SF 1607G SF 1608G UNIT Marking code on the device SF 1601G SF 1602G SF 1603G SF 1604G SF 1605G SF 1606G SF 1607G SF 1608G Repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Reverse voltage, total rms value VR(RMS) 35 70 105 140 210 280 350 420 V Forward current IF 16 A Surge peak forward current, 8.3ms single half sine wave superimposed on rated load IFSM 125 A Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C
SF1601G – SF1608G Taiwan Semiconductor
2 Version: I2104
Junction-to-case thermal resistance RӨJC 1.5 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage per diode(1) SF1601G SF1602G SF1603G SF1604G IF = 8A, TJ = 25°C VF - 0.975 V SF1605G SF1606G - 1.300 V SF1607G SF1608G - 1.700 V Reverse current @ rated VR per diode(2) TJ = 25°C IR - 10 µA TJ = 100°C - 400 µA Junction capacitance per diode SF1601G SF1602G SF1603G SF1604G 1MHz, VR = 4.0V CJ 80 - pF SF1605G SF1606G SF1607G SF1608G 60 - pF Reverse recovery time IF = 0.5A, IR = 1.0A, Irr = 0.25A trr - 35 ns Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms
ORDERING INFORMATION
ORDERING CODE(1)(2) PACKAGE PACKING SF16xG TO-220AB 50 / Tube SF16xGH TO-220AB 50 / Tube Notes: 1. “x” defines voltage from 50V(SF1601G) to 600V(SF1608G) 2. “H” means AEC-Q101 qualified
SF1601G – SF1608G Taiwan Semiconductor
3 Version: I2104
(TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics Fig.5 Maximum Non-Repetitive Forward Surge Current 25 50 75 100 125 150 100 1 10 100 f=1.0MHz Vsig=50mVp-p SF1605G-1608G SF1601G-1604G 0.1 100 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=100°C TJ=75°C 0.1 100 Pulse width 300μs 1% duty cycle SF1607G-1608G SF1605G-1606G SF1601G-1604G 100 125 150 1 10 100 8.3ms single half sine wave CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) REVERSE VOLTAGE (V) CASE TEMPERATURE (°C) INSTANTANEOUS REVERSE CURRENT (µA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) NUMBER OF CYCLES AT 60 Hz PEAK FORWARD SURGE CURRENT (A)
SF1601G – SF1608G Taiwan Semiconductor
4 Version: I2104
(TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram
SF1601G – SF1608G Taiwan Semiconductor
5 Version: I2104
PACKAGE OUTLINE DIMENSIONS TO-220AB MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code
SF1601G – SF1608G Taiwan Semiconductor
6 Version: I2104
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