SF11G ZSELEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Features

! Low Forward Voltage Drop ! H i g h C u r r e n t C a p a b i l i t y A B A ! High Reliability ! High Surge Current Capability M e c h a n i c a l D a t a C ! C a s e : M o l d e d P l a s t i c D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number M aximum Ratings and Electrical Characteristics A =25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. *Glass passivated forms are available upon request Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 1 of 2 ! Lead Free: For RoHS / Lead Free Version pF nS V0.95 35 70 105 140 210 280 350 420 V 50 100 150 200 300 400 500 600 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RW M V R RMS Reverse Voltage V R(RMS) Average Rectified Output Current ( N o t e 1 ) @ T A = 55°C I O 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FS M 30 A Forward Voltage @I F = 1.0A V FM Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C I RM 5.0 100 µA Reverse Recovery Time (Note 2) t rr Typical Junction Capacitance (Note 3) C j Operating Temperature Range T j -65 to +150 °C Storage Temperature Range T ST G -65 to +150 °C 1.30 1.70 20 10 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Glass Passivated Die Construction DO-41 Dim Min Max A 24.5 — B 4.06 5.21 C 0.60 0.80 D 2.00 3.00 All Dimensions in mm

I , PEAK FORWARD SURGE CURRENT (A) FSM 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC Method) 100 1 10 100 C , CAPACITANCE (pF) j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1MHz j 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 200 I , AVERAGE FWD RECTIFIED CURRENT (A) (AV) T , AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve A Single phase half-wave

60 Hz resistive or inductive load

50 NI (Non-inductive)W 10 NIW

1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test t rr Set time base for 5/10ns/cm +0.5A -0.25A -1.0ANotes: 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 2 of 2 SF11G – SF18G SF11G – SF18G 0.01 1.0 2.0 I , INSTANTANEOUS FORWARD CURRENT (A) F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25 C j Pulse width = 300 sm SF11G-SF14G Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SF15G-SF16G SF17G-SF18G