SF11 HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o
- VRRM 50V-600V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode SF1X X:From 1 to 8 Super Fast Recovery Rectifier Diode SF11 THRU SF18 Item Symbol Unit I F(AV) I FSM I 60Hz Half-sine wave, Resistance load, Ta=50℃ 60Hz Half-sine wave,1 cycle, Ta=25℃ Item Symbol Unit Test Condition Peak Forward Voltage V FM V I RRM1 Ta=25℃ 5 Peak Reverse Current I RRM2 μA V RM RRM Ta=125℃ 50 Reverse Recovery time t rr ns I F =0.5A I R =1A I RR =0.25A R θJ-A Between junction and ambient Thermal Resistance(Typical) R θJ-L /W℃ Between junction and lead 1.25 1.7 SF 11 12 13 14 15 16 17 18 50 100 150 200 300 400 500 600 1.0 I FM =1.0A SF 11 12 13 14 15 16 17 18 0.95 70 105 140 210 280 350 42035 V RMS V Maximum RMS Voltage
H igh Diode Semiconductor V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 VF(V) SF17-SF18 SF15-SF16 SF11-SF14 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375''(9.5mm) Lead Length 100 0.2 0.4 0.6 0.8 1.0 FIG.4:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 IFSM(A) Number of Cycles FIG.2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100
H igh Diode Semiconductor DO-4 1 1.0(25.4) MIN .205(5.21) .166(4.22) .034(0.86) .028(0.71) DIA .107(2.72) .080(2.03) 1.0(25.4) MIN Unit: in inches (millimeters) DIA
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers