SET23AXXL02 UMW | Alldatasheet

Document overview

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Technical content

TVS diodes are characterized by their high surge capability, low operating and clamping voltages, and fast response time. This makes them ideal for use as board level protection of sensitive semic onductor components. The low profile SOT-23 package allows flexibility in the design of crowded circuit boards.

  • IEC61000-4-2 ESD 15KV Air, 8KV contact compliance
  • SOT-23 surface mount package
  • Protects one bidirectional li ne or two unidirectional lines
  • Working voltage: 3.3V, 5V, 12V, 15V, 24V and 36V
  • Low leakage current
  • Low operating and clamping voltages
  • Solid-state silicon avalanche technology
  • Lead Free/RoHS compliant
  • Solder reflow temperature: Pure Tin-Sn, 260~270 ℃
  • Cellular handsets and accessories
  • Personal digital assistants (PDA’s)
  • Portable instrumentation
  • Set Top Box (STB)
  • Servers, notebook, and desktop PC
  • Wireless bus protection Pin Configuration UMW R SET23AxxL02

Description

www.umw-ic.com 1 UTD Semiconductor Co.,Limited

ESD voltage (Contact discharge) VESD kV ESD voltage (Air discharge) ±15 Storage & operating temperature range T STG ,TJ -55~+150 ℃ Electrical Characteristics (TJ=25℃) SET23A03L02 Parameter Symbol Condition Min. Typ. Max. Unit Reverse stand-off voltage V RWM 3.3 V Reverse breakdown voltage V BR I BR=1mA 4 V Reverse leakage current I R VR=3.3V Each I/O pin 5 μA Clamping voltage (tp=8/20μs) V C I PP=1A 7.5 V Clamping voltage (tp=8/20μs) V C I PP=10A 15 V Off state junction capacitance C J 0Vdc,f=1MHz Between I/O pins and GND 200 pF SET23A05L02 Parameter Symbol Condition Min. Typ. Max. Unit Reverse stand-off voltage V RWM 5 V Reverse breakdown voltage V BR I BR=1mA 6 V Reverse leakage current I R VR=5V Each I/O pin 5 μA Clamping voltage (tp=8/20μs) V C I PP=1A 9.8 V Clamping voltage (tp=8/20μs) V C I PP=15A 20 V Off state junction capacitance C J 0Vdc,f=1MHz Between I/O pins and GND 220 pF UMW R SET23AxxL02www.umw-ic.com 2 UTD Semiconductor Co.,Limited

Electrical Characteristics (TJ=25℃) SET23A12L02 Parameter Symbol Condition Min. Typ. Max. Unit Reverse stand-off voltage V RWM 12 V Reverse breakdown voltage V BR I BR=1mA 13.3 V Reverse leakage current I R VR=12V Each I/O pin 1 μA Clamping voltage (tp=8/20μs) V C I PP=1A 19 V Clamping voltage (tp=8/20μs) V C I PP=10A 25.9 V Off state junction capacitance C J 0Vdc,f=1MHz Between I/O pins and GND 100 pF SET23A15L02 Parameter Symbol Condition Min. Typ. Max. Unit Reverse stand-off voltage V RWM 15 V Reverse breakdown voltage V BR I BR=1mA 16.7 V Reverse leakage current I R VR=15V Each I/O pin 1 μA Clamping voltage (tp=8/20μs) V C I PP=1A 24 V Clamping voltage (tp=8/20μs) V C I PP=10A 30 V Off state junction capacitance C J 0Vdc,f=1MHz Between I/O pins and GND 90 pF SET23A24L02 Parameter Symbol Condition Min. Typ. Max. Unit Reverse stand-off voltage V RWM 24 V Reverse breakdown voltage V BR I BR=1mA 26.7 V Reverse leakage current I R VR=24V each I/O pin 1 μA Clamping voltage (tp=8/20μs) V C I PP=1A 43 V Clamping voltage (tp=8/20μs) V C I PP=5A 49 V Off state junction capacitance C J 0Vdc,f=1MHz Between I/O pins and GND 80 pF UMW R SET23AxxL02 www.umw-ic.com 3 UTD Semiconductor Co.,Limited

Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF. 0.022 REF. Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP. 0.037 TYP. Marking

Ordering information

Ordercode Package Baseqty Deliverymode SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel UMW R SET23AxxL02www.umw-ic.com 5 UTD Semiconductor Co.,Limited UMW SET23A03L02 UMW SET23A05L02 UMW SET23A12L02 UMW SET23A15L02 UMW SET23A24L02 UMW SET23A36L02 Marking B 03C B 05C B 12C B 15C B 24C B 36C