SESD5V0D5 SHUNYE | Alldatasheet

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Technical content

Features

Ultra low capacitance:0. pF Ultra low leakage: nA level Operating voltage: V Ultra l ow clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: kV Contact discharge: ±2 kV IEC61000-4-5 (Lightning) A (8/20μs) ROHS Complian t Mechanical Characteristics Package: SOD-523 Lead Finish: Matte Tin Case Material: “Green” Molding Compound. Moisture Sensitivity: Level 3 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Below

Description

a very low capacitance TVS diode,utilizing leading monolithic silicon technology toprovide fast response time and ultra low ESDclamping voltage, making this device an idealsolution for protecting voltage sensitive data andpower line. The SESD5V0D5 complies with theIEC61000-4-2(ESD) with kV air and kVcontact discharge. It is assembled into anultra-small SOD-523 lead-free package. The smallsize and high ESD surge protection makeD L an ideal choice to protect cell phone, audio players, Ethernet and many other high speed port able applications. Dimensions and Pin Configuration Marking Information Circuit and Pin Schematic Marking Part Number Packaging Reel Size SESD5V0D5/ D L 1D5 3000/Tape & Reel 7 inch

Ordering Information

5.0V ESD Protection Diode SESD5V0D5 /DL0501D5 www.shunyegroup.com.cn V2.22

Absolute Maximum Ratings (T A =25°C unless otherwise specified) Electrical Characteristics (T A =25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk W Peak Pulse Current (8/20µs) I PP A ESD per IEC 61000−4−2 (Air) ESD per IEC 61000−4−2 (Contact) V ESD ±25 ±20 kV Operating Temperature Range T J −55 to +125 Storage Temperature Range Tstg −55 to +150 Parameter Symbol Min Typ Max Unit Test Condition Reverse Working Voltage V RWM V Breakdown Voltage V BR V I T = 1mA Reverse Leakage Current I R µA V RWM = 5V Clamping Voltage V C V I PP = 1A (8 x 20µs pulse) Clamping Voltage V C V I PP = 5A (8 x 20µs pulse) Junction Capacitance C J 0.6 0.8 pF VR = 0V, f = 1MHz SESD5V0D5 /DL0501D5 www.shunyegroup.com.cn V2.22

Typical Performance Characteristics (T A =25 unless otherwise Specified) X 20μ s Pulse Waveform T ime_t(uS) 100 % of Peak Pulse Current Junction Capacitance vs. Reverse Voltage Pe ak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current Power Derating Curve Note Data is taken with a 10x attenuator ESD Clamping Voltage 8 kV Contact per IEC61000−4−2 SESD5V0D5 /DL0501D5 www.shunyegroup.com.cn V2.22

A 0.51 0.77 0.020 0.031 0.50 0.70 0.020 0.028 b 0.25 0.35 0.010 0.014 c 0.08 0.15 0.0 0.006 D 0.75 0.85 0.030 0.033 E 1.10 1.30 0.043 0.051 1.50 1.70 0.059 0.067 0.20REF 0.008REF L 0.01 0.07 0.001 0.003 Θ REF REF SESD5V0D5 /DL0501D5 www.shunyegroup.com.cn V2.22