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4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY DESCRIPTIONS The SESD099-04AT1 is a 4-channel ultra low capacitance rail protection diodes array. Each channel consists of diodes that steer positive or negative ESD current positive or negative rail. A zener diode is integrated between the positive and negative supply rails. In the typical applications, the negative rail pin (assigned as GND) is connected with system ground. The Positive ESD current is steered to the ground through an ESD diode and Zener diode and the positive ESD voltage is clamped to the zener voltage. The 6(6'099-04AT1 is idea to protect high speed data lines. package type is provided for easy PCB layout. DESCRIPTIONS * 4 channels of ESD protection; * HDMI / DVI ports; * Provides ESD protection to IEC61000-4-2 level 4 * Display Port interface; - ±15kV air discharge * 10M / 100M / 1G Ethernet; - ±8kV contact discharge; * USB 2.0 interface; * Channel I/O to GND capacitance: 0.9pF(Max) * VGA interface * Channel I/O to I/O capacitance: 0.45pF(Max) * Set-top box; * Low clamping voltage; * Flat panel Monitors / TVs; * PC / Note book* Low operating voltage; * Improved zener structure; * Optimized package for easy high speed data lines PCB layout; * RoHS compliant. FEATURES APPLICATIONS

ORDERING INFORMATION

Part No. Package Marking Material Shipping 6(6'099-04AT1 SOT-23-6 C96 Halogen 3000Tape&Reel in to the array to either the a pair of ESD clamp ESD Three WILLAS ELECTRONIC CORP.2012-09 SESD099-04AT1

Characteristics Symbol Ratings Unit Peak Pulse Power(8/20μs) P 150 W PP Peak Pulse Current(8/20μs) I 5 A PP ESD per IEC 61000-4-2(Air) V ±15kV kV ESD1 ESD per IEC 61000-4-2(Contact) V ±8kV kV ESD2 Operating Temperature Range Topr -55 ~ +125 °C Storage Temperature Range Tstg -55 ~ +150 °C ELECTRICAL CHARACTERISTICS(Tamb=25°C) Characteristics Symbol Test Conditions Min. Typ. Max. Unit Reverse Working Voltage Any I/O pin to GND 5 V VRWM Reverse Breakdown Voltage t =1mA; V 6 V BR Any I/O pin to GND Reverse Leakage Current V =5V, T=25°C; RWM I 1 μA R Any I/O pin to GND I Positive Clamping Voltage VC1 PP=1A, t =8/20Μs; P Positive pulse; 8.5 12.0 V Any I/O pin to GND I Negative Clamping Voltage V PP=1A, t =8/20μS; P Negative pulse; 1.8 V Any I/O pin to GND Junction Capacitance Between Channel V R=0V, f=1MHz; C 0.35 0.45 pF J1 Between I/O pins Junction Capacitance Between I/O And GND V R=0V, f=1MHz; C 0.9 pF J2 Any I/O pin to GND WILLAS ELECTRONIC CORP.2012-09 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY SESD099-04AT1

TYPICAL ELECTRICAL CHARACTERISTICS CURVE WILLAS ELECTRONIC CORP.2012-09 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY SESD099-04AT1

TYPICAL ELECTRICAL CHARACTERISTICS CURVE SOT-23-6 WILLAS ELECTRONIC CORP.2012-09 4-CHANNEL LOW CAPACITANCE ESD PROTECTION DIODES ARRAY SESD099-04AT1 .020(0.50) .040(1.05) .036(0.90) .057(1.45) .000(0.01) .051(1.30) .051(1.30) .070(1.75) .110(2.80) .122(3.10) .067(1.70) .083(2.10) .098(2.50) .118(3.00) Dimensions in inches and (millimeters)