SESD LITTELFUSE | Alldatasheet

Document overview

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Technical content

Features

  • 0.20pF TYP capacitance
  • ESD, IEC61000-4-2, ±20kV contact, ±20kV air
  • Low clamping voltage of 9.2V @ I PP=2.0A (tP=8/20μs)
  • Low profile DFN array packages
  • Facilitates excellent signal integrity
  • AEC-Q101 qualified (1004)
  • ELV Compliant
  • RoHS Compliant and Lead Free 0802/1004 DFN array 0402 DFN array

1004 DFN array

ACE-Q101 qualified)

0402 DFN array

1103 DFN array

Datasheet SamplesResources

© 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/11/17 TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Thermal Information Parameter Rating Units Storage Temperature Range -55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Electrical Characteristics - (TOP=25°C) Parameter Test Conditions Min Typ Max Units Input Capacitance @ VR = 0V , f = 3GHz 0.20 0.22 pF Breakdown Voltage VBR @ IT=1mA 9.00 V Reverse Working Voltage 7. 0 V Reverse Leakage Current IL @ VRWM=5.0V 25 50 nA Clamping Voltage VCL @ IPP=2.0A 9.20 V Peak Pulse Current tP=8/20μs 2.0 A ESD Withstand Voltage IEC61000-4-2 (Contact) ±20 kV IEC61000-4-2 (Air) ±20 Insertion Loss Diagram Frequency (Hz) 1.E+09 -20.0 S21 Insertion Loss (dB) -10.0 -5.0 -15.0 -25.0 -30.0 Insertion Loss Diagram - 1103 DFN Array Frequency (Hz) 1.E+09 -20.0 S21 Insertion Loss (dB) -10.0 -5.0 -15.0 -25.0 -30.0 Symbol Parameter Value Units IPP Peak Current (tp=8/20μs) 2.0 A TOP Operating Temperature -55 to 125 °C TSTOR Storage Temperature -55 to 150 °C

© 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/11/17 TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays Device IV Curve -2 -1 01 2 34 56 78 Cur rent (mA) Voltage (V) 1.0 0.8 0.6 0.4 0.2 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 91 0 Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone TL to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Soldering Parameters Product Characteristics of 0402 DFN Package Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substrate material Silicon Body Material V-0 per UL 94 Molded Epoxy Notes : 1 . All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. USB3.0 Eye Diagram Without SESD Device With SESD Device

5.0 Gb/s, 1000mV differential, CPO Compliant Test Pattern

© 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/11/17 TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays Pad Layout Package Dimensions — 0402 DFN Array Symbol Millimeters Inches Min Typ Max Min Typ Max A1 0 - 0.05 0 - 0.002 A3 0.13 ref. 0.005 ref. e1 0.35 BSC 0.014 BSC e2 0.65 BSC 0.026 BSC Symbol Millimeters Inches A 0.60 0.024 B 1. 0 0 0.039 C 0.23 0.009 D 0.35 0.014 D1 0.35 0.014 E 0.15 0.006 F 0.30 0.012 Embossed Carrier T ape & Reel Specification — 0402 DFN Array W P2 P0 F Section Y - Y Y Y T User Feeding Direction Pin 1 Location Symbol Millimeters A0 0.70+/-0.05 B0 1 .15+/-0.05 D0 ø 1 .55 + 0.05 D1 ø 0.40 +/- 0.05 E1 1 .75+/-0.10 F 3.50+/-0.05 K0 0.47+/-0.05 P0 4.00+/-0.10 P1 2.00+/-0.05 P2 2.00+/-0.05 W 8.00 +/-0.10 T 0.20+/-0.05

© 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/11/17 TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays Pad Layout Package Dimensions — 0802 DFN Array Symbol Millimeters Inches Min Typ Max Min Typ Max A1 0 0.02 0.05 0 -- 0.002 A3 0.127 ref 0.005 ref. L2 0.05 BSC 0.002 BSC e 0.40 BSC 0.016 BSC e1 0.45 BSC 0.018 BSC e2 0.25 BSC 0.010 BSC N 4 4 Symbol Millimeters Inches A 0.60 0.024 B 2.00 0.079 C 0.30 0.012 D 0.30 0.012 E 0.30 0.012 F 0.10 0.004 F1 0.15 0.006 G 0.40 BSC 0.016 BSC G1 0.45 BSC 0.018 BSC Embossed Carrier T ape & Reel Specification — 0802 DFN Array W P2 P0 F Section Y - Y Y Y T User Feeding Direction Pin 1 Location Symbol Millimeters A0 0.81+/-0.05 B0 2.21+/-0.05 D0 ø 1 .50+0.10/-0 D1 ø 0.40 min E1 1 .75+/-0.10 F 3.50+/-0.05 K0 0.46+/-0.05 P0 4.00+/-0.10 P1 2.00+/-0.10 P2 2.00+/-0.05 W 8.00+0.30/-0.10 T 0.25+/-0.20

© 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/11/17 TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays Package Dimensions — 1004 DFN Array APin 1 ID Marking Location SIDE VIEW 1 SIDE VIEW 2 (Front) TOP VIEWB OTTOM VIEW E LxND 8xb e L1 2x 1 23 45Gnd b1 2x 69N=10 Gnd 2xR END VIEW 1E ND VIEW 2 Recommended Pad Layout A B 4x G 4x G E 8x C 8x D 2x F1 2x F E 8x C 8x D 2x D1 2x F 2x F1 A B 4x G Alternate APin 1 ID Marking Location SIDE VIEW 1 SIDE VIEW 2 (Front) TOP VIEWB OTTOM VIEW E LxND 8xb e L1 2x 1 23 45Gnd b1 2x 69N=10 Gnd 2xR END VIEW 1E ND VIEW 2 Recommended Pad Layout A B 4x G 4x G E 8x C 8x D 2x F1 2x F E 8x C 8x D 2x D1 2x F 2x F1 A B 4x G Alternate Symbol Millimeters Inches A 1 .20 0.047 B 2.20 0.087 C 0.50 0.020 D 0.20 0.008 D1 0.40 0.016 E 0.20 0.008 F 0.30 0.012 F1 0.20 0.008 G 0.50 BSC 0.020 BSC G1 1 .00 BSC 0.039 BSC Symbol Millimeters Inches Min Typ Max Min Typ Max A1 0.00 0.02 0.05 0 -- 0.002 A3 0.127 ref. 0.005 ref. e 0.50 BSC 0.020 BSC e1 0.50 BSC 0.020 BSC R 0.08 BSC 0.003 BSC R1 0.13 BSC 0.005 BSC N 10 10 Embossed Carrier T ape & Reel Specification — 1004 DFN Array W P2 P0 F Section Y - Y Y Y T Symbol Millimeters A0 1 .20+/-0.05 B0 2.70+/-0.05 D0 ø 1 .50+0.10/-0 D1 ø 0.50 min E1 1 .75+/-0.10 F 3.50+/-0.05 K0 0.51+/-0.10 P0 4.00+/-0.10 P1 4.00+/-0.10 P2 2.00+/-0.05 W 8.00+0.30/-0.10 T 0.25+/-0.05

© 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/11/17 TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays Package Dimensions — 1103 DFN Array Pad Layout Symbol Millimeters Inches A 0.80 0.031 B 2.80 0.110 C 0.35 0.014 D 0.30 0.012 E 0.45 0.018 F 0.10 0.004 F1 0.15 0.006 G 0.40 BSC 0.016 BSC G1 0.45 BSC 0.018 BSC Symbol Millimeters Inches Min Typ Max Min Typ Max A1 0.00 0.02 0.05 0 -- 0.002 A3 0.127 ref. 0.005 ref. L2 0.05 BSC 0.002 BSC e 0.40 BSC 0.016 BSC e1 0.45 BSC 0.018 BSC e2 0.40 BSC 0.016 BSC N 6 6 W P2 P0 F Section Y - Y Y Y T Embossed Carrier T ape & Reel Specification — 1103 DFN Array Symbol Millimeters A0 1 .00+/-0.05 B0 3.00+/-0.05 D0 ø 1 .50+0.10/-0 D1 ø 0.50 min E1 1 .75+/-0.10 F 3.50+/-0.05 K0 0.51+/-0.05 P0 4.00+/-0.10 P1 4.00+/-0.10 P2 2.00+/-0.05 W 8.00+0.30/-0.10 T 0.25+/-0.05

© 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 01/11/17 TVS Diode Arrays (SPA ® Diodes) SESD Series Ultra Low Capacitance Diode Arrays Part Marking System 0402 1004 C MC 4C 6C Part Numbering System SESD Qxxxx G DFN Array Package Package

1103 Directional

U: Unidirectional Common GND pin SESD product 0402 No of channel Input Capacitance 0020: 0.20pF (TYP) Breakdown Voltage 090: 9.0V (TYP) 2: Two Channels 4: Four Channels U 0020 090x 6: Six Channels 1004 0802

Ordering Information

Part Number Package Marking Ordering Part Number Minimum Order Quantity SESD0402Q2UG-0020-090 0402 DFN Array I C RF2946-000 50,000 SESD0802Q4UG-0020-090 0802 DFN Array I MC RF3076-000 25,000 SESD1004Q4UG-0020-090 1004 DFN Array I 4C RF3077-000 25,000 SESD1103Q6UG-0020-090 1103 DFN Array I 6C RF3078-000 25,000 1103 0802