SES5VT236H DGNJDZ | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
Low operating voltage: 5V Ultra low capacitance:1.4pF Solid-state silicon-avalanche and active circuit triggering technology Back-drive protection for power-down mode Lead-free version available IEC COMPATIBILITY (EN61000-4) IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) Level-3,55A (5/50ns) IEC 61000-4-5 (Lightning) 14 Mechanical Characteristics SOT-23-6L package Molding compound flammability rating: UL 94V-0 Packaging: Tape and Reel RoHS Compliant
Applications
Digital Visual Interface (DVI) USB2.0 Power and Data lines protection Notebook and PC Computers Monitors and Flat Panel Displays Absolute Maximum Ratings ( Ta=25 unless otherwise noted ) Parameter Symbol Value Units Peak Pulse Power(tP = 8/20 s) PPP 200 W Peak Pulse Current(tP = 8/20 s) I PP 14 A Operating Temperature T J -55 to +85 Storage Temperature T STG -55 to +150 SES5VT236H-6U SOT-23-6L Schematic Diagram www.dgnjdz.com
Transient Voltage Suppressor Electrical Parameter Parameter Symbol Clamping Voltage @ I PP V C Peak Pulse Current I PP Breakdown Voltage @ I T V BR Test Current I T Reverse Leakage Current @ V RWM I R Reverse Standoff Voltage V RWM Forward Voltage@ I F V F Forward Current I F Electrical Characteristics(Ta=25 unless otherwise specified ) Parameter Symbol Test Condition Value Unit Min Typ. Max Reverse standoff voltage VRWM Pin5 to pin2 T=25°C 5 V Breakdown voltage VBR IT=1mA, Pin 5 to pin2 6 V Reverse leakage current IR VRWM=5V, T=25°C Pin 5 to pin2 5 A Clamping voltage V C I PP=14A, tP=8/20 s I/O pin to GND 12.5 V Forward voltage V F I T=10mA 0.8 1 V Junction capacitance C J VR=0V,f=1MHz, I/O to GND 3 pF VR=0V,f=1MHz, I/O to I/O 1.4 Ratings and Characteristic Curves ( TA = 25°C unless otherwise noted ) www.dgnjdz.com
Transient Voltage Suppressor www.dgnjdz.com
Transient Voltage Suppressor Package Outline Dimensions www.dgnjdz.com