SEP8706 HONEYWELL | Alldatasheet
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Technical content
AlGaAs Infrared Emitting Diode SEP8706
DESCRIPTION
FEATURES
Side-looking plastic package• 50¡ (nominal) beam angle• 880 nm wavelength• Higher output power than GaAs at equivalent drive currents Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger The SEP8706 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. DIM_071.ds4 INFRA-20.TIF OUTLINE DIMENSIONS in inches (mm) 3 plc decimals ±0.005(0.12)Tolerance 2 plc decimals ±0.020(0.51) Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h52
AlGaAs Infrared Emitting Diode SEP8706
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 53
AlGaAs Infrared Emitting Diode SEP8706 Radiant Intensity vs Angular Displacement gra_030.ds4 Angular displacement - degrees Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -60 -45 -30 -15 0 +15 +30 +45 +60 Fig. 1 Radiant Intensity vs Forward Current gra_028.ds4 Forward current - mA Norm alized radiant intensity 0.1 0.2 0.5 1.0 2.0 5.0 10.0 10 20 30 40 50 100 TA = 25 °C Fig. 2 Forward Voltage vs Forward Current gra_201.ds4 Forward current - mA Forward voltage - V 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 10 20 30 40 50 Fig. 3 Forward Voltage vs Temperature gra_208.ds4 Temperature - °C Forward voltage - V 1.20 1.25 1.35 1.40 1.50 1.55 1.60 -40 -15 10 35 60 85 IF = 20 mA 1.45 1.30 Fig. 4 Spectral Bandwidth gra_011.ds4 Wavelength - nm Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 760 800 840 880 920 960 1000 Fig. 5 Coupling Characteristics with SDP8406 gra_031.ds4 Lens-to-lens separation - inches Light current - m A 0.1 0.2 0.4 0.6 1.0 IF = 20 mA VCE = 5V TA = 25 °C Fig. 6 Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h54
AlGaAs Infrared Emitting Diode SEP8706 Relative Power Output vs Free Air Temperature gra_130.ds4 TA - Free-air temperature - (°C) Relative power output 0.1 1.0 -50 -25 0 +25 +50 +75 +100 0.2 0.5 2.0 5.0 IF = 30 mA IF = 20 mA IF = 10 mA IF = 40 mA Fig. 7 All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 55