SEP8705 HONEYWELL | Alldatasheet
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Technical content
AlGaAs Infrared Emitting Diode SEP8705
DESCRIPTION
FEATURES
T-1 package• 15¡ (nominal) beam angle• 880 nm wavelength• Consistent optical properties• Higher output than GaAs at equivalent drive current Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington The SEP8705 is an aluminum gallium arsenide infrared emitting diode transfer molded in a T-1 smoke gray plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. These devices typically exhibit 70% greater power intensity compared to GaAs devices at the same forward current. Lead lengths are staggered to provide a simple method of polarity identification. (.51) .020 SQ. LEAD TYP .050 (1.27) DIA. (3.94) .155 ANODE CATHODE DIA. .125(3.18) .115(2.92) MIN.(12.7) .500 .200 (5.08) MAX. (6.35) .250 .05(1.27) DIM_101.ds4 INFRA-55.TIF OUTLINE DIMENSIONS in inches (mm) 3 plc decimals ±0.005(0.12)Tolerance 2 plc decimals ±0.020(0.51) Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h48
AlGaAs Infrared Emitting Diode SEP8705
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 70 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C. SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 49
AlGaAs Infrared Emitting Diode SEP8705 Radiant Intensity vs Angular Displacement gra_027.ds4 Angular displacement - degrees Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Fig. 1 Radiant Intensity vs Forward Current gra_028.ds4 Forward current - mA Norm alized radiant intensity 0.1 0.2 0.5 1.0 2.0 5.0 10.0 10 20 30 40 50 100 TA = 25 °C Fig. 2 Forward Voltage vs Forward Current gra_201.ds4 Forward current - mA Forward voltage - V 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 10 20 30 40 50 Fig. 3 Forward Voltage vs Temperature gra_208.ds4 Temperature - °C Forward voltage - V 1.20 1.25 1.35 1.40 1.50 1.55 1.60 -40 -15 10 35 60 85 IF = 20 mA 1.45 1.30 Fig. 4 Spectral Bandwidth gra_011.ds4 Wavelength - nm Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 760 800 840 880 920 960 1000 Fig. 5 Coupling Characteristics with SDP8405 gra_029.ds4 Lens-to-lens separation - inches Light current - m A 0.1 0.2 0.4 0.7 VCE = 5 V IF = 25 mA TA = 25 °C Fig. 6 Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h50
AlGaAs Infrared Emitting Diode SEP8705 Relative Power Output vs Free Air Temperature gra_130.ds4 TA - Free-air temperature - (°C) Relative power output 0.1 1.0 -50 -25 0 +25 +50 +75 +100 0.2 0.5 2.0 5.0 IF = 30 mA IF = 20 mA IF = 10 mA IF = 40 mA Fig. 7 All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 51