SEP8507 HONEYWELL | Alldatasheet
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Technical content
GaAs Infrared Emitting Diode SEP8507
DESCRIPTION
FEATURES
End-emitting plastic package• 135¡ (nominal) beam angle• 935 nm wavelength• Low profile for design flexibility• Mechanically and spectrally matched to SDP8407 phototransistor The SEP8507 is a gallium arsenide infrared emitting diode molded in an end-emitting red plastic package. The chip is positioned to emit radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification. DIM_009.cdr INFRA-18.TIF OUTLINE DIMENSIONS in inches (mm) 3 plc decimals ±0.008(0.20)Tolerance 2 plc decimals ±0.020(0.51) Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h44
GaAs Infrared Emitting Diode SEP8507
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 60 mA Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.66 mW/¡C. SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 45
GaAs Infrared Emitting Diode SEP8507 Radiant Intensity vs Angular Displacement gra_032.ds4 Angular displacement - degrees Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -160 -120 -80 -40 0 +40 +80 +120 +160 Fig. 1 Radiant Intensity vs Forward Current gra_028.ds4 Forward current - mA Norm alized radiant intensity 0.1 0.2 0.5 1.0 2.0 5.0 10.0 10 20 30 40 50 100 TA = 25 °C Fig. 2 Forward Voltage vs Forward Current gra_003.ds4 Forward current - mA Forward voltage - V 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 0 20 40 60 Fig. 3 Forward Voltage vs Temperature gra_207.ds4 Temperature - °C Forward voltage - V 1.00 1.05 1.15 1.20 1.30 1.35 1.40 -40 -15 10 35 60 85 IF = 20 mA 1.25 1.10 Fig. 4 Spectral Bandwidth gra_005.ds4 Wavelength - nm Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 870 890 910 930 950 970 990 1010 Fig. 5 Relative Power Output vs Free Air Temperature gra_130.ds4 TA - Free-air temperature - (°C) Relative power output 0.1 1.0 -50 -25 0 +25 +50 +75 +100 0.2 0.5 2.0 5.0 IF = 30 mA IF = 20 mA IF = 10 mA IF = 40 mA Fig. 6 All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h46
GaAs Infrared Emitting Diode SEP8507 Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 47