SEP8505 HONEYWELL | Alldatasheet
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Technical content
GaAs Infrared Emitting Diode SEP8505
DESCRIPTION
FEATURES
T-1 package• 15¡ (nominal) beam angle• 935 nm wavelength• Consistent on-axis optical properties• Mechanically and spectrally matched to SDP8405 phototransistor and SDP8105 photodarlington The SEP8505 is a gallium arsenide infrared emitting diode transfer molded in a T-1 red plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification. (.51) .020 SQ. LEAD TYP .050 (1.27) DIA. (3.94) .155 ANODE CATHODE DIA. .125(3.18) .115(2.92) MIN.(12.7) .500 .200 (5.08) MAX. (6.35) .250 .05(1.27) DIM_101.ds4 INFRA-55.TIF OUTLINE DIMENSIONS in inches (mm) 3 plc decimals ±0.005(0.12)Tolerance 2 plc decimals ±0.020(0.51) Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h36
GaAs Infrared Emitting Diode SEP8505
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 70 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.18 mW/¡C. SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 37
GaAs Infrared Emitting Diode SEP8505 Radiant Intensity vs Angular Displacement gra_027.ds4 Angular displacement - degrees Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Fig. 1 Radiant Intensity vs Forward Current gra_028.ds4 Forward current - mA Norm alized radiant intensity 0.1 0.2 0.5 1.0 2.0 5.0 10.0 10 20 30 40 50 100 TA = 25 °C Fig. 2 Forward Voltage vs Forward Current gra_003.ds4 Forward current - mA Forward voltage - V 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 0 20 40 60 Fig. 3 Forward Voltage vs Temperature gra_207.ds4 Temperature - °C Forward voltage - V 1.00 1.05 1.15 1.20 1.30 1.35 1.40 -40 -15 10 35 60 85 IF = 20 mA 1.25 1.10 Fig. 4 Spectral Bandwidth gra_005.ds4 Wavelength - nm Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 870 890 910 930 950 970 990 1010 Fig. 5 Coupling Characteristics with SDP8405 gra_029.ds4 Lens-to-lens separation - inches Light current - m A 0.1 0.2 0.4 0.7 VCE = 5 V IF = 25 mA TA = 25 °C Fig. 6 Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h38
GaAs Infrared Emitting Diode SEP8505 Relative Power Output vs Free Air Temperature gra_130.ds4 TA - Free-air temperature - (°C) Relative power output 0.1 1.0 -50 -25 0 +25 +50 +75 +100 0.2 0.5 2.0 5.0 IF = 30 mA IF = 20 mA IF = 10 mA IF = 40 mA Fig. 7 All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 39