SEP0125 SSDI | Alldatasheet
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Designer’s Data Sheet SOLID STATE DEVICES, INC. NOTE: All specifications are subject to change without notifications. SCD’s for these devices should be reviewed by SSDI prior to release. SEP0125
14005 Stage Road * Santa Fe Springs, Ca 90670
Phone: (562) 404-4474 * Fax: (562) 404-1773 FEATURES: Low V F, 300mV @ 1A, TJ = 75oC Low Reverse Leakage Current Low Conduction Current (<100mV @ 1mA) Guard Ring for Overvoltage Protection 100 oC Operating Temperature Solderable Top or Wire Bondable Metal Scheme Available SH0005ADATA SHEET #:
1 AMP
25 VOLTS
oC-55 TO +100Top & Tstg
1 AmpsIo
VRPeak Repetitive Reverse and DC Blocking Voltage Operating and Storage Temperature Average Rectified Forward Current (Resistive Load, 60Hz, Sine Wave, TJ = 75 oC
SOLID STATE DEVICES, INC. SEP0125 Phone: (562) 404-4474 * Fax: (562) 404-1773 CASE OUTLINE: Electrical Characteristics SYMBOL UNITS Instantaneous Forward Voltage Drop F = 1ADC, TJ = 25 oC, 300:s Pulse) Reverse Leakage Current TJ = 25 oC, 300:sec pulse minimum VR = 3.3V VR = 25V CJ pF Reverse Leakage Current TJ = 100oC, 300:sec pulse minimum VR = 3.3V VR = 15V 40IR4 5.0 mA2.0IR2 IR1 mA1.0 mA mA IR6 mA50 IR5 mA15 Reverse Leakage Current TJ = 75 oC, 300:sec pulse minimum VR = 3.3V VR = 25V VF2 VDC0.300 Instantaneous Forward Voltage Drop (IF = 1ADC, TJ = 75 oC, 300:s Pulse) IR3 Junction Capacitance (VR = 5VDC, TJ = 25oC, f = 1MHz)