SEN-R-1050-XXX SENSITRON | Alldatasheet

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Technical content

TECHNICAL DATA SHEET 4199, REV. -

  • 221 West Industry Court • Deer Park, NY 11729-4681 • Phone (631) 586-7600 • Fax (631) 242-9798 •
  • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • TRANSIENT VOLTAGE SUPPRESSOR 5000 WATT SERIES GLASS PASSIVATED DIE/CELL FEATURES DESCRIPTION
  • 5000W peak pulse power dissipation
  • Glass passivated junction
  • Low incremental surge resistance
  • Excellent clamping capability
  • Repetition rate (duty cycle): 0.05 %
  • Fast response time: typically less than 1.0 ps
  • Typical IR less than 1µA above 10V

APPLICATIONS

ü Power Supply Surge Protection ü Data Link Surge Protection ü Lightning Transient Suppression ü Electrostatic Protection This is a transient voltage suppressor series extending from 5.0 volts to 100 volts. It is available in either uni -directional or bi -directional configurations. The cel l version is available in a Type 1 configuration with double tabs. A Type 2 configuration with silicone edge protection protecting the edge of the die and the die cavity between the double tabs is also available as a custom option.

ELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL Test Conditions Min TYP Max Unit Peak Pulse Power Pppm TA = 25 8C, Tp = 1 ms (Note 1) 5000 Watts Electrical Parameters See Table Maximum Solder Temperature Tmax 10 Second exposure 250 8C Operating & Storage Temperature Tj, Tstg -55 175 8C Note 1: Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 8C per Fig. 2. A B C D E F G 220 13.5 277 98 305 277 98 Note 1: All dimension in MIL Note 2: The dimension is for low voltage parts (<40V) only. The dimension B, D and G will be larger for high voltage parts (>40V). B D G C E F A CHIP TVS T1 CELL TVS T2 CELL

TECHNICAL DATA SHEET 4199, REV. -

  • 221 West Industry Court • Deer Park, NY 11729-4681 • Phone (631) 586-7600 • Fax (631) 242-9798 •
  • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • Note 2: Die only configuration requires user to provide adequate energy absorption. SEN-R-1050-XXX 5000 Watt TVS Series Part Number Vr (V) Vz min @ Iz (V) Vz max @ Iz (V) Iz (mA) Vcc (V) Ip (A) Ir max @ Vr (uA)

TECHNICAL DATA SHEET 4199, REV. -

  • 221 West Industry Court • Deer Park, NY 11729-4681 • Phone (631) 586-7600 • Fax (631) 242-9798 •
  • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • 100 1000 10000 100000 1 10 100 1000 0.1 100 Fig. 1 - Peak Pulse Power Rating Curve Non-repetitive pulse waveform shown in Fig.3 TA = 25°C PPPM-Peak Pulse Power (kW) td - Pulse Width (sec.) 100 0 25 50 75 100 125 150 175 200 Fig.2 - Pulse Derating Curve TA - Ambient Temperature (°C) PPPM-Peak Pulse Power (kW) 100 150 Fig.3 - Pulse Waveform t - Time(ms) IPPM - Peak Pulse Current,% TJ = 25°C Pulse Width(td) is defined as the point where the peak current decays to 50% of IPPM 10/1000µsec.Waveform as defined by R.E.A. Peak Value IPPM td tr = 10µsec. Fig. 4 - Typical Junction Capacitance CJ, Junction Capacitance TJ = 25°C f = 1MHZ Vsig = 50mVp-p VBR - Breakdown Voltage (V) Measured at Zero Bias Measured at Stand-off voltage Vwm 0 25 50 75 100 125 150 175 200 Fig. 5 - Steady State Power Derating Curve PPM(AV),Steady State Power Dissipation (W) TL - Lead Temperature (°C) 60Hz Resistive or Inductive Load 200 250 300 350 400 450 500 1 10 100 Fig.6 - Maximum Non-repetitive Forward Surge current Number of Cycles at 60 HZ IFSM,Peak Forward Surge Currnet (A) 8.3ms Single Half Sine-Wave (JEDEC Method)
  • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
  • World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.