SEMIX202GB12E4S SEMIKRON | Alldatasheet

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Technical content

Features

  • Homogeneous Si
  • Trench = Trenchgate technology CE(sat) with positive temperature coefficient
  • High short circuit capability
  • UL recognised file no. E63532 Typical Applications
  • AC inverter drives
  • U P S
  • Electronic Welding Remarks
  • Case temperature limited to TC=125°C max.
  • Product reliability results are valid for Tj=150°C
  • Dynamic values apply to the following combination of resistors: R Gon,main = 1,0 Ω RGoff,main = 1,0 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 175 °C Tc =2 5° C 314 A Tc =8 0° C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =2 5° C 229 A Tc =8 0° C 172 A IFnom 200 A IFRM IFRM = 3xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 990 A Tj -40 ... 175 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =2 0 0A VGE =1 5V chiplevel Tj =2 5° C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V VCE0 Tj =2 5° C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE VGE =1 5V Tj =2 5° C 5.0 5.8 m Ω Tj = 150 °C 7.5 8.0 m Ω VGE(th) VGE=VCE, IC =7 . 6m A 5 5 . 8 6 . 5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA Tj = 150 °C mA Cies VCE =2 5V VGE =0V f=1M H z 12.3 nF Coes f=1M H z 0.81 nF Cres f=1M H z 0.69 nF QG VGE =- 8 V . . . + 1 5 V 1130 nC RGint Tj =2 5° C 3.75 Ω td(on) VCC = 600 V IC =2 0 0A RG on =2 . 4Ω RG off =2 . 4Ω di/dton = 3600 A/µs di/dtoff = 2100 A/µs Tj = 150 °C 253 ns tr Tj = 150 °C 55 ns Eon Tj = 150 °C 22 mJ td(off) Tj = 150 °C 533 ns tf Tj = 150 °C 113 ns Eoff Tj = 150 °C 27.9 mJ Rth(j-c) per IGBT 0.14 K/W

2 Rev. 1 – 20.02.2009 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF =2 0 0A VGE =0V chip Tj =2 5° C 2.2 2.52 V Tj = 150 °C 2.1 2.5 V VF0 Tj =2 5° C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V rF Tj =2 5° C 4.0 4.5 5.1 m Ω Tj = 150 °C 5.3 6.3 6.8 m Ω IRRM IF =2 0 0A di/dtoff = 3400 A/µs VGE =- 1 5V VCC = 600 V Tj = 150 °C 160 A Qrr Tj = 150 °C 31.5 µC Err Tj = 150 °C 12 mJ Rth(j-c) per diode 0.26 K/W Module LCE 18 nH RCC'+EE' res., terminal-chip TC =2 5° C 0.7 m Ω TC = 125 °C 1m Ω Rth(c-s) per module 0.045 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm Nm w 250 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K SEMiX®2s GB Trench IGBT Modules SEMiX202GB12E4s

  • Homogeneous Si
  • Trench = Trenchgate technology CE(sat) with positive temperature coefficient
  • High short circuit capability
  • UL recognised file no. E63532 Typical Applications
  • AC inverter drives
  • U P S
  • Electronic Welding Remarks
  • Case temperature limited to TC=125°C max.
  • Product reliability results are valid for Tj=150°C
  • Dynamic values apply to the following combination of resistors: R Gon,main = 1,0 Ω RGoff,main = 1,0 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω

© by SEMIKRON Rev. 1 – 20.02.2009 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

4 Rev. 1 – 20.02.2009 © by SEMIKRON Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge

© by SEMIKRON Rev. 1 – 20.02.2009 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. SEMiX 2s GB