SEMIX151GD12E4S SEMIKRON | Alldatasheet

Document overview

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Technical content

Features

  • Homogeneous Si
  • Trench = Trenchgate technology CE(sat) with positive temperature coefficient
  • High short circuit capability
  • UL recognised file no. E63532 Typical Applications
  • AC inverter drives
  • U P S
  • Electronic Welding Remarks
  • Case temperature limited to TC=125°C max.
  • Product reliability results are valid for Tj=150°C Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 175 °C Tc =2 5° C 232 A Tc =8 0° C 179 A ICnom 150 A ICRM ICRM = 3xICnom 450 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =2 5° C 189 A Tc =8 0° C 141 A IFnom 150 A IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 900 A Tj -40 ... 175 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =1 5 0A VGE =1 5V chiplevel Tj =2 5° C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V VCE0 Tj =2 5° C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE VGE =1 5V Tj =2 5° C 6.7 7.7 m Ω Tj = 150 °C 10.0 10.7 m Ω VGE(th) VGE=VCE, IC =6m A 5 5 . 8 6 . 5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA Tj = 150 °C mA Cies VCE =2 5V VGE =0V f=1M H z 9.3 nF Coes f=1M H z 0.58 nF Cres f=1M H z 0.51 nF QG VGE =- 8 V . . . + 1 5 V 850 nC RGint Tj =2 5° C 5.00 Ω td(on) VCC = 600 V IC =1 5 0A RG on =1 Ω RG off =1 Ω di/dton = 3900 A/µs di/dtoff = 2000 A/µs Tj = 150 °C 209 ns tr Tj = 150 °C 39 ns Eon Tj = 150 °C 14.1 mJ td(off) Tj = 150 °C 483 ns tf Tj = 150 °C 82 ns Eoff Tj = 150 °C 19.2 mJ Rth(j-c) per IGBT 0.19 K/W

2 Rev. 2 – 17.07.2009 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF =1 5 0A VGE =0V chip Tj =2 5° C 2.1 2.46 V Tj = 150 °C 2.1 2.4 V VF0 Tj =2 5° C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V rF Tj =2 5° C 4.3 5.6 6.4 m Ω Tj = 150 °C 6.7 7.8 8.5 m Ω IRRM IF =1 5 0A di/dtoff = 3400 A/µs VGE =- 1 5V VCC = 600 V Tj = 150 °C 185 A Qrr Tj = 150 °C 23 µC Err Tj = 150 °C 8.9 mJ Rth(j-c) per diode 0.31 K/W Module LCE 20 nH RCC'+EE' res., terminal-chip TC =2 5° C 0.7 m Ω TC = 125 °C 1m Ω Rth(c-s) per module 0.04 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm Nm w 350 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K SEMiX® 13 GD Trench IGBT Modules SEMiX151GD12E4s

  • Homogeneous Si
  • Trench = Trenchgate technology CE(sat) with positive temperature coefficient
  • High short circuit capability
  • UL recognised file no. E63532 Typical Applications
  • AC inverter drives
  • U P S
  • Electronic Welding Remarks
  • Case temperature limited to TC=125°C max.
  • Product reliability results are valid for Tj=150°C

© by SEMIKRON Rev. 2 – 17.07.2009 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

4 Rev. 2 – 17.07.2009 © by SEMIKRON Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge

© by SEMIKRON Rev. 2 – 17.07.2009 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. SEMiX 13 GD