SEMIX151GD126HDS_08 SEMIKRON | Alldatasheet

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Technical content

Features

  • Homogeneous Si
  • Trench = Trenchgate technology CE(sat) with positive temperature coefficient
  • High short circuit capability
  • UL recognised file no. E63532 Typical Applications
  • AC inverter drives
  • U P S
  • Electronic Welding Remarks
  • Case temperatur limited to T C=125°C max.
  • Not for new design Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 150 °C Tc =2 5° C 168 A Tc =8 0° C 119 A ICnom 100 A ICRM ICRM = 2xICnom 200 A VGES -20 ... 20 V tpsc VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V 10 µs Tj -40 ... 150 °C Inverse diode IF Tj = 150 °C Tc =2 5° C 152 A Tc =8 0° C 105 A IFnom 100 A IFRM IFRM = 2xIFnom 200 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 700 A Tj -40 ... 150 °C Module It(RMS) 600 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =1 0 0A VGE =1 5V chiplevel Tj =2 5° C 1.7 2.1 V Tj = 125 °C 2.00 2.45 V VCE0 Tj =2 5° C 11 . 2 V Tj = 125 °C 0.9 1.1 V rCE VGE =1 5V Tj =2 5° C 7.0 9.0 m Ω Tj = 125 °C 11.0 13.5 m Ω VGE(th) VGE=VCE, IC =4m A 5 5 . 8 6 . 5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 0.1 0.3 mA Tj = 125 °C mA Cies VCE =2 5V VGE =0V f=1M H z 7.2 nF Coes f=1M H z 0.38 nF Cres f=1M H z 0.33 nF QG VGE =- 8 V . . . + 1 5 V 800 nC RGint Tj =2 5° C 7.50 Ω td(on) VCC = 600 V IC =1 0 0A Tj = 125 °C RG on =1 . 7Ω RG off =1 . 7Ω 290 ns tr 50 ns Eon 12 mJ td(off) 605 ns tf 110 ns Eoff 14 mJ Rth(j-c) per IGBT 0.21 K/W Rth(j-s) per IGBT K/W

2 Rev. 13 – 03.12.2008 © by SEMIKRON Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF =1 0 0A VGE =0V chiplevel Tj =2 5° C 1.6 1.8 V Tj = 125 °C 1.6 1.8 V VF0 Tj =2 5° C 0.9 1 1.1 V Tj = 125 °C 0.7 0.8 0.9 V rF Tj =2 5° C 5.0 6.0 7.0 m Ω Tj = 125 °C 7.0 8.0 9.0 m Ω IRRM IF =1 0 0A di/dtoff = 2900 A/µs VGE =- 1 5V VCC = 600 V Tj = 125 °C 125 A Qrr Tj = 125 °C 26 µC Err Tj = 125 °C 11.5 mJ Rth(j-c) per diode 0.36 K/W Rth(j-s) per diode K/W Module LCE 20 nH RCC'+EE' res., terminal-chip TC =2 5° C 0.7 m Ω TC = 125 °C 1m Ω Rth(c-s) per module 0.04 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm Nm w 350 g Temperature sensor R100 Tc=100°C (R25=5 kΩ) 0,493 ±5% kΩ B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K SEMiX®13 GD Trench IGBT Modules SEMiX151GD126HDs Preliminary Data

  • Homogeneous Si
  • Trench = Trenchgate technology CE(sat) with positive temperature coefficient
  • High short circuit capability
  • UL recognised file no. E63532 Typical Applications
  • AC inverter drives
  • U P S
  • Electronic Welding Remarks
  • Case temperatur limited to T C=125°C max.
  • Not for new design

© by SEMIKRON Rev. 13 – 03.12.2008 3 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

4 Rev. 13 – 03.12.2008 © by SEMIKRON Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge

© by SEMIKRON Rev. 13 – 03.12.2008 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. SEMiX 13 GD