SEMIX141KT16S_15 SEMIKRON | Alldatasheet
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Terminal height 17 mm Chips soldered directly to isolated substrate Typical Applications* Input Bridge Rectifier for AC/DC motor control Power supply Absolute Maximum Ratings Symbol Conditions Values Unit Chip IT(AV) sinus 180° Tc =8 5° C 140 A Tc =1 0 0° C 105 A ITRMS A ITSM 10 ms Tj =2 5° C 3400 A Tj =1 3 0° C 3000 A i2t 10 ms Tj =2 5° C 57800 A²s Tj =1 3 0° C 45000 A²s VRSM 1700 V VRRM 1600 V VDRM 1600 V (di/dt)cr Tj = 130 °C 200 A/µs (dv/dt)cr Tj = 130 °C 1000 V/µs Tj -40 ... 130 °C Module Tstg -40 ... 125 °C Visol AC sinus 50Hz 1m i n 4000 V 1s 4800 V Characteristics Symbol Conditions min. typ. max. Unit Chip VT Tj =2 5° C , IT = 360 A 1.65 V VT(TO) Tj = 130 °C 0.85 V rT Tj = 130 °C 2.1 m Ω IDD;IRD Tj =1 3 0° C , VDD = VDRM; VRD = VRRM 60 mA tgd Tj =2 5° C , IG =1A , d iG/dt = 1 A/µs 1µ s tgr VD = 0.67 * VDRM 2µ s tq Tj = 130 °C 120 µs IH Tj =2 5° C 100 300 mA IL Tj =2 5° C , RG =3 3 Ω 200 500 mA VGT Tj =2 5° C , d . c . 2V IGT Tj =2 5° C , d . c . 150 mA VGD Tj = 130 °C, d.c. 0.25 V IGD Tj = 130 °C, d.c. 10 mA Rth(j-c) continuous DC per thyristor K/W per diode K/W Rth(j-c) sin. 180° per thyristor 0.21 K/W per diode K/W Rth(j-c) rec. 120° per thyristor K/W per diode K/W Module Rth(c-s) per chip K/W per module 0.075 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm a 5 * 9,81 m/s² w1 45 g
2 Rev. 3.0 – 13.08.2015 © by SEMIKRON Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig. 2L: Power dissipation of one module vs. rms current Fig. 2R: Power dissipation of one module vs. case temperature Fig. 3L: Power dissipation of two modules vs. direct current Fig. 3R: Power dissipation of two modules vs. case temperature
© by SEMIKRON Rev. 3.0 – 13.08.2015 3 Fig. 4L: Power dissipation of three modules vs. direct current Fig. 4R: Power dissipation of three modules vs. case temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time
4 Rev. 3.0 – 13.08.2015 © by SEMIKRON This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staf f. Fig. 9: Gate trigger characteristics spring configuration SEMiX 1s