BCR191 INFINEON | Alldatasheet

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Technical content

BCR191.../SEMB1 PNP Silicon Digital Transistor

  • Switching circuit, inverter, interface circuit, driver circuit
  • Built in bias resistor (R1 = 22kΩ , R2 = 22kΩ )
  • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR191/F/L3 BCR191T/W BCR191S SEMB1 EHA07183 C EB R 2 EHA07173 6 54 321 C1 B2 E2 C2B1E1 R 2 R 2 TR1 TR2 Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 BCR191S BCR191T BCR191W SEMB1 WOs WOs WO WOs WOs WOs WO 1=B 1=B 1=B 1=E1 1=B 1=B 1=E1 2=E 2=E 2=E 2=B1 2=E 2=E 2=B2 3=C 3=C 3=C 3=C2 3=C 3=C 3=C2 4=E2 4=E2 5=B2 5=B2 6=C1 6=C1 SOT23 TSFP-3 TSLP-3-4 SOT363 SC75 SOT323 SOT666

BCR191.../SEMB1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 30 Collector current IC 100 mA Total power dissipation- BCR191, TS ≤ 102°C BCR191F, TS ≤ 128°C BCR191L3, TS ≤ 135°C BCR191S, TS ≤ 115°C BCR191T, TS ≤ 109°C BCR191W, TS ≤ 124°C SEMB1, TS ≤ 75°C Ptot 200 250 250 250 250 250 250 mW Junction temperature Tj 150 °C Storage temperature Tstg 150 ... -65 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BCR191 BCR191F BCR191L3 BCR191S BCR191T BCR191W SEMB1 RthJS ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 105 ≤ 300 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

BCR191.../SEMB1 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 V(BR)CEO 50 - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 50 - - Collector-base cutoff current VCB = 40 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 10 V, IC = 0 IEBO - - 350 µA DC current gain1) IC = 5 mA, VCE = 5 V hFE 50 - - - Collector-emitter saturation voltage1) IC = 10 mA, IB = 0,5 mA VCEsat - - 0,3 V Input off voltage IC = 100 µA, VCE = 5 V Vi(off) 0,8 - 1,5 Input on voltage IC = 2 mA, VCE = 0,3 V Vi(on) 1 - 2,5 Input resistor R1 15 22 29 kΩ Resistor ratio R1/R2 0,9 1 1,1 - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz fT - 200 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 3 - pF 1Pulse test: t < 300µs; D < 2%

BCR191.../SEMB1 DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 -1 10 0 10 1 10 2 mA IC 0 10 1 10 2 10 3 10 hFE Collector-emitter saturation voltage V CEsat = ƒ(IC), hFE = 20 VCEsat 0 10 1 10 2 10 mA IC Input on Voltage Vi(on) = ƒ(IC) VCE = 0.3V (common emitter configuration) 10 -1 10 0 10 1 10 2 V Vi(on) -1 10 0 10 1 10 2 10 mA IC Input off voltage Vi(off) = ƒ(IC) VCE = 5V (common emitter configuration) 0 0.5 1 1.5 2 V 3 Vi(off) -2 10 -1 10 0 10 1 10 mA IC

BCR191.../SEMB1 Total power dissipation Ptot = ƒ(TS) BCR191 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Total power dissipation Ptot = ƒ(TS) BCR191F 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Total power dissipation Ptot = ƒ(TS) BCR191L3 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Total power dissipation Ptot = ƒ(TS) BCR191S 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot

BCR191.../SEMB1 Total power dissipation Ptot = ƒ(TS) BCR191T 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Total power dissipation Ptot = ƒ(TS) BCR191W 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Total power dissipation Ptot = ƒ(TS) SEMB1 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot

BCR191.../SEMB1 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) BCR191 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load RthJS = ƒ(tp) BCR191 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) BCR191F 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = ƒ (tp) BCR191F 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 K/WRthJS D=0.5 0.2 0.1 0.05 0.02 0.01 0.005

BCR191.../SEMB1 Permissible Puls Load RthJS = ƒ (tp) BCR191L3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 RthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) BCR191L3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax/ PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = ƒ (tp) BCR191S 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) BCR191S 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

BCR191.../SEMB1 Permissible Puls Load RthJS = ƒ (tp) BCR191T 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/WRthJS D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) BCR191T 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax / PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Puls Load RthJS = ƒ (tp) BCR191W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/W RthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) BCR191W 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

BCR191.../SEMB1 Permissible Puls Load RthJS = ƒ (tp) SEMB1 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) SEMB1 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax/ PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5