SEFM8N18 STMICROELECTRONICS | Alldatasheet

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SG S-THOMSON O7€ D ff 7929237 oolsoq2 7 ff Pee eee ve ny TBC_17589_ WD FBR bee ee ae UA RAY Sermmez0 | Peal EAE ean yet tate serpen20.-: N-CHANNEL POWER MOS TRANSISTORS SEES Oe Me HIGH SPEED SWITCHING APPLICATIONS [Voss | Rosin] 'o | ee Th duct: diffused multi-cell silicon gate EEE Sig BS GEER ie ai BO N-channel enhancement mode Power-Mos field | 180V/200V | 04.0] 8a | ei ol ETE REN CBN St ABSOLUTE MAXIMUM RATINGS SEFM or SEFP See ee ee anis enzo yess aye Manag Bas Pee A Vos Drain-source voltage (Vgg = 0) 180 200V ee Vocr Drain-gate voltage (Ros = 20K2) 180V 200V GA IEEE Dao 8, Be Baer te aS Ves Gate-source voltage £20 ESR SED a ees pai aae oat lb Drain current (continuous) Teagq = 25°C BA SR ae er er ge lowl*) Drain current (pulsed) 265A Boe a eee PINTS OR eeaeeeny tS EP low Gate current (pulsed) 1.54 Sy he NP ae eS Prot Total power dissipation at Toasa = 25°C 75W ag see Soineege eee ines 25 7 Derating factor 0.6W/°C = Bo eee Tote Storage temperature -65 to 150°C eg EN Bg Ree ah i Ty Max. operating junction temperature 150°C cae Pe ate od (0) Pulse width limited by safe operating aroo , : oe aes SSE EG | INTERNAL SCHEMATIC DIAGRAM —g TS eo SO ee ae MECHANICAL DATA Q Dimenstons in mm OT LE : Drain connected toad. "Brain connected to coe iad BOE RS ES Bee ee et 1a My ey Ay CEE BOSS 5 M - as By 4 : { ne ee ? : ee ee = : ; vmo-220 ak 5 Tos 2 | ee en ” 9/5 2130 El c-312 Hoppe reece cies oer

SG S-THOMSON O7E D ff 7929237 O018053 9 ff geen Ne ~F3€ 17590 DS VBO-\\\\ (Ay Serta Se ee ee, me MM. ite AA. sepnnezo - = et BRO Te ee’ bpp Py > SEFPBNIB Peet ere (ited = SEFPOMZO | Se ee ee THERMAL DATA ch lanes Gaede eae Rinjoose Thermal resistance junction-case max. | 1,.67°C/W . SOR tae meen Maa I Th Maximum lead temperature for soldering purpose 275°C Bae erie Stan ca eee eg - ELECTRICAL CHARACTERISTICS (T,5¢ = 25°C unless otherwise specified) SEU ER AUtea WNn aces ae yn Cc OFF pe Se er Veen oss Orain-source lp = 5 MA Veg = 0 EEE GAs ESE a breakdown voltage for SEFMEN18/SEFP8N18 | 180 v Ne et ESS ae Pg ech for SEFMBN20/SEFP8N20 | 200 v RE EY Ee ibe Ipss Zero gate voltage Vos = 0.85 Rated Voss HA Rec em a ee drain current (Vgg = 0) | Ty = 100°C mA Sele rers te ates Ae ts Nee Sao 8 less Gate-body leakage Veg = +20 V nA Se SE Oe eR gee current (Vpg = 0) eo Oe ee ee at ar on* ee Ves th) Gate threshold Vos= Ves! = 1mA 45| Vv ee ee ee voltage T, = 100°C 40| v ee ee ee Ros ton} Static drain-source Veg = 10V p= 4A 0.27| 0.4] a ag Oe fe a RS on resistance ne es ae Vos fon) Drain-source Ves = 10V. Ip = 8A Vv eens es Say egies ea es On voltage Veg = 10V Ip = 4A v Bees ‘EMT Sas PEND RRR OS Tis Bee Qj “Forward . Vos = 1BV Ip = 4A mho Oe eee eer transconductance Rate area en a mera DYNAMIC pe ieee ee ee Cie Input capacitance 980 | 1200] SpE Rie SNR a Coss Output capacitance Vps = 26V f= 1 MHz 200 | 260 TE CEG Ee Sa ES Crs Reverse transfer Vos = 0 80| 100 sce AES! Ge Se capacitance s a SON BAe oe sa : ae eee han Pe : a ee ee ee een

S G S-THOMSON OVE D ff 7929237 DOISOq4 o ee se cas Mee SEFMNG20. See Oe Fy yoo seppania 4 TENS STAN Ce SL, ELECTRICAL CHARACTERISTICS (continued) ; EEO a RBS cocci 9 Turn-on delay ti Voc = 265.V 40 ns Bo hg ee Se ee el . item Rise time | 15° 0.8 Rated Ip 150 ns Re Bee es Se ta jo ‘Turn-off delay time | Rgg = 500 R= 600 100 ns te ee eee t Fall timo (see test circuit) 100 ns “ten gn ght Gave! UCR he ag SOURCE DRAIN DIODE es OT Vso ‘Forward on voltage | Vv EI EB ton Forward Turn-on time | Isp = Rated Ip Vgs = 0 ns SESE EGS eF SNS eR eae te Reverse recovery ns Soa UB Se ay eee ee eos * Pulsed: pulse duration < 300us, duty cycle < 2% eae eee ae = For typical curves, and clamping inductive load, gate charge, body drain diode trr measurement Hee aks ee test circuits see SGSP363 Datasheet. SP Bee, Agee or Bas os SWITCHING TIMES RESISTIVE LOAD PEGE SET Se Tost circuit Waveforms Mee ee | Pa 1 yo ob a ~—Beeee ee ee | i cr wie ot ' rt tee eee seem _tgCon) tr s-eoss — tavott) Hf Fog Wiese eater CIO Pulse width < 100 us PRE Re SRS UE mea he rae Duty cycle < 2% mm. gee bee SEER Mees V,=10V . : HS . . c-314 7: oe a ee