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SEF101MH~SEF107MH VOLTAGE 50 ~ 1000 V

1.0 Amp High Efficiency Recovery Rectifiers Elektronische Bauelemente

09-Feb-2011 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen-free

FEATURES

 Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.  Low profile surface mounted application in order to optimize board space.  High current capability.  Ultrafast recovery time for high efficiency.  Glass passivated chip junction. MECHANICAL DATA  Case: Molded plastic, SOD-123MH  Epoxy: UL94-V0 rated flame retardant  Terminals: Plated terminals, solderable per MIL-STD-750, Method 2026.  Polarity: Indicated by cathode band  Mounting Position: Any  Weight: 0.011 gram (Approximately) MARKING CODE Part Number Marking Code Part Number Marking Code SEF101MH H1 SEF105MH H5 SEF102MH H2 SEF106MH H6 SEF103MH H3 SEF107MH H7 SEF104MH H4

PACKAGE INFORMATION

SOD-123MH 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified.) Parameter Symbol Part Number UnitSEF 101MH SEF 102MH SEF 103MH SEF 104MH SEF 105MH SEF 106MH SEF 107MH Repetitive Peak Reverse Voltage (Max.) VRRM 50 100 200 400 600 800 1000 V RMS Voltage (Max.) V RMS 35 70 140 280 420 560 700 V Continuous Reverse Voltage(Max.) V R 50 100 200 400 600 800 1000 V SOD-123MH REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 3.30 3.70 D 3.10 (Max.) B 1.40 1.80 E 0.80 (Typ.) C 0.60 1.00 F 0.30 (Typ.) EE F B C D A

SEF101MH~SEF107MH VOLTAGE 50 ~ 1000 V 09-Feb-2011 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Part Number Unit Testing Condition SEF 101 MH SEF 102 MH SEF 103 MH SEF 104 MH SEF 105 MH SEF 106 MH SEF 107 MH Forward Voltage (Max.) V F 1 1.3 1.7 V Average Forward Rectified Current (Max.) IO 1 A Ambient Temperature =50°C Forward Surge Current I FSM 25 A 8.3ms single half sine-wave superimposed on rated load (JEDEC method) DC Reverse Current at Rated DC Blocking Voltage (Max.) IR VR=VRRM, TA=25°C

150 VR=VRRM,TA=100°C

Junction to Ambient (Typ.) RJA 42 °C/W Diode Junction Capacitance (Typ.) C J 70 pF f=1MHz and applied 4V DC reverse voltage Storage and Operating Temperature Range TSTG, TJ -65 ~ 175, -55 ~ 150 °C Reverse recovery time TRR 50 75 nS

SEF101MH~SEF107MH VOLTAGE 50 ~ 1000 V 09-Feb-2011 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES