DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100mΩ Improved Shoot-Through FOM Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) ParameterSymbol Limit Unit Drain-Source VoltageVDS -30 V Gate-Source VoltageVGS ± 20 Continuous Drain CurrentID -5.3 A Pulsed Drain Current 1)IDM -20 Maximum Power Dissipation TA = 25oCPD 1.4 W TA = 75oC 0.8 Operating Junction and Storage Temperature RangeTJ, Tstg -55 to 150 oC Junction-to-Case Thermal Resistance RθJC 50 oC/W Junction-to-Ambient Thermal Resistance (PCB mounted) 2)RθJA 90 Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Device Shipping P94 Marking 3000/Tape&ReelSE9435LT1

Ordering Information

2012-10 WILLAS ELECTRONIC CORP. SE9435LT1 SOT-23

ELECTRICAL CHARACTERISTICS

ParameterSymbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown VoltageBVDSS VGS = 0V, ID -30 = -250uA V Drain-Source On-State ResistanceRDS(on) VGS D 70.0 = -4.5V, I = -4.2A 100.0 mΩ Drain-Source On-State ResistanceRDS(on) VGS D 50.0 = -10V, I = -5.3A 70.0 Gate Threshold VoltageVGS(th) VDS =VGS, ID -1 = -250uA -1.7 -3 V Zero Gate Voltage Drain CurrentIDSS VDS 1 = -24V, VGS = 0V u A Gate Body LeakageIGSS VGS ±100 = ± 20V, VDS = 0V nA Forward Transconductancegfs VDS D 10 = -10V, I = -5.3A S Dynamic3) Total Gate ChargeQg VDS =-15V, ID = -5.3A VGS = -10V nCGate-Source ChargeQgs 3 Gate-Drain ChargeQgd 7 Turn-On Delay Timetd(on) VDD = -15V, RL = 15Ω ID = -1A, VGEN = -10V RG = 6Ȋ ns Turn-On Rise Timetr 15 Turn-Off Delay Timetd(off) 75 Turn-Off Fall Timetf 40 Input CapacitanceCiss VDS = -15V, VGS = 0V f = 1.0 MHz 745 pFOutput Capacitance Coss 440 Reverse Transfer CapacitanceCrss 120 Source-Drain Diode Max. Diode Forward CurrentIS -2.6 A Diode Forward Voltage VSD IS -1.3 = -2.6A, VGS = 0V V Note : Pulse test: pulse width <= 300us, duty cycle<= 2% 2012-10 WILLAS ELECTRONIC CORP. 30V P-Channel Enhancement-Mode MOSFET SE9435LT1

TYPICAL ELECTRICAL CHARACTERISTICS 2012-10 WILLAS ELECTRONIC CORP. 30V P-Channel Enhancement-Mode MOSFET SE9435LT1

0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012-10 WILLAS ELECTRONIC CORP. 30V P-Channel Enhancement-Mode MOSFET SE9435LT1 Dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .086(2.1 0) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20)