NE5539 PHILIPS | Alldatasheet

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/C0080 /C0115 /C0111/C0110/C0111 /C0115 NE/SE5539 High frequency operational amplifier Product data Supersedes data of 2001 Aug 03 File under Integrated Circuits, IC11 Data Handbook

2002 Jan 25

Philips Semiconductors Product data NE/SE5539High frequency operational amplifier

22002 Jan 25 853-0814 27610

DESCRIPTION

The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and extremely high slew rate amplifiers. Emitter-follower inputs provide a true differential input impedance device. Proper external compensation will allow design operation over a wide range of closed-loop gains, both inverting and non-inverting, to meet specific design requirements.

FEATURES

  • Bandwidth – Unity gain: 350 MHz – Full power: 48 MHz – GBW: 1.2 GHz at 17 dB
  • Slew rate: 600/Vµs
  • AVOL : 52 dB typical
  • Low noise: 4 nV√Hz typical PIN CONFIGURATION + INPUT NC –VSUPPLY – INPUT NC NCNC VOS ADJ/ AV ADJ GROUND NC OUTPUT D, N Packages NC TOP VIEW FREQUENCY COMPENS. SL00570

Figure 1. Pin Configuration

APPLICATIONS

  • High speed datacom
  • Video monitors & TV
  • Satellite communications
  • Image processing
  • RF instrumentation & oscillators
  • Magnetic storage

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 14-Pin Plastic Dual In-Line Package (DIP) 0 °C to +70 °C NE5539N SOT27-1 14-Pin Plastic Small Outline (SO) package 0 °C to +70 °C NE5539D SOT108-1 14-Pin Plastic Dual In-Line Package (DIP) –55 °C to +125 °C SE5539N SOT27-1 ABSOLUTE MAXIMUM RATINGS 1 SYMBOL PARAMETER RATING UNITS VCC Supply voltage ±12 V PD(max) Maximum power dissipation; Tamb = 25 °C (still-air)2 N package 1.45 W D package 0.99 W Operating temperature range Tamb NE5539D, NE5539N 0 to +70 °C SE5539N –55 to +125 °C Tstg Storage temperature range –65 to +150 °C Tj Max junction temperature +150 °C Tsld Lead soldering temperature (10 sec max) +230 °C NOTES: 1. Differential input voltage should not exceed 0.25 V to prevent excessive input bias current and common-mode voltage 2.5 V. These voltage limits may be exceeded if current is limited to less than 10 mA. 2. Derate above 25 °C, at the following rates: N package at 11.6 mW/°C D package at 7.9 mW/°C

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Figure 2. Equivalent Circuit

Philips Semiconductors Product data NE/SE5539High frequency operational amplifier

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DC ELECTRICAL CHARACTERISTICS VCC = ±8 V, Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SE5539 NE5539 UNITSSYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS VOS Input offset voltage VO = 0 V; Over temp. 2 5 mVVOS Input offset voltage O R S = 100 Ω Tamb = 25 °C 2 3 2.5 5 mV ΔVOS /ΔT 5 5 µV/°C IOS Input offset current Over temp. 0.1 3 µAIOS Input offset current Tamb = 25 °C 0.1 1 2 µA ΔIOS /ΔT 0.5 0.5 nA/°C I Input bias current Over temp. 6 25 µAIB Input bias current Tamb = 25 °C 5 13 5 20 µA ΔIB/ΔT 10 10 nA/°C CMRR Common mode rejection ratio F = 1 kHz; RS = 100 Ω ; VCM ±1.7 V 70 80 70 80 dBCMRR Common mode rejection ratio Over temp. 70 80 dB R IN Input impedance 100 100 kΩ R OUT Output impedance 10 10 Ω R L = 150 Ω to GND +Swing +2.3 +2.7 VL and 470 Ω to –VCC –Swing –1.7 –2.2 V VO Output voltage swing R L = 25 Ω to GND +Swing +2.3 +3.0 VVOUT O utput voltage sw ing L Over temp. –Swing –1.5 –2.1 V R L = 25 Ω to GND +Swing +2.5 +3.1 VL Tamb = 25 °C –Swing –2.0 –2.7 V ICC Positive supply current VO = 0 V, R1 = ∞ ; Over temp. 14 18 mAICC+ Positive supply current VO = 0 V, R1 = ∞ ; Tamb = 25 °C 14 17 14 18 mA ICC Negative supply current VO = 0 V, R1 = ∞ ; Over temp. 11 15 mAICC– Negative supply current VO = 0 V, R1 = ∞ ; Tamb = 25 °C 11 14 11 15 mA PSRR Power supply rejection ratio ΔVCC = ±1 V; Over temp. 300 1000 µV/VPSRR Pow er supply rejection ratio ΔVCC = ±1 V; Tamb = 25 °C 200 1000 µV/V R L = 150 Ω to GND, 470 Ω to –VCC 47 52 57 dB A Li l l t i VO = +2.3 V, –1.7 V;Over temp. dBAVOL Large signal voltage gain O , R L = 2 Ω to GND Tamb = 25 °C 47 52 57 dB VO = +2.5 V, –2.0 V;Over temp. 46 60 dBO , R L = 2 Ω to GND Tamb = 25 °C 48 53 58 dB

Philips Semiconductors Product data NE/SE5539High frequency operational amplifier

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DC ELECTRICAL CHARACTERISTICS VCC = ±6 V, Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SE5539 UNITSSYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS VOS Input offset voltage Over temp. 2 5 mVVOS Input offset voltage Tamb = 25 °C 2 3 mV IOS Input offset current Over temp. 0.1 3 µAIOS Input offset current Tamb = 25 °C 0.1 1 µA I Input bias current Over temp. 5 20 µAIB Input bias current Tamb = 25 °C 4 10 µA CMRR Common-mode rejection ratio VCM = ±1.3 V; RS = 100 Ω 70 85 dB ICC Positive supply current Over temp. 11 14 mAICC+ Positive supply current Tamb = 25 °C 11 13 mA ICC Negative supply current Over temp. 8 11 mAICC– Negative supply current Tamb = 25° C 8 10 mA PSRR Power supply rejection ratio ΔVCC = ±1V Over temp. 300 1000 µV/VPSRR Pow er supply rejection ratio ΔVCC = ±1 V Tamb = 25 °C µV/V Over temp +Swing +1.4 +2.0 VO Output voltage swing R L = 150 Ω to GND O ver temp. –Swing –1.1 –1.7 VVOUT O utput voltage sw ing L and 390 Ω to –VCC T =2 5°C +Swing +1.5 +2.0 V Tamb = 25 °C –Swing –1.4 –1.8

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VCC = ±8 V, RL = 150 Ω to GND and 470 Ω to –VCC , unless otherwise specified. VCC = ±6 V, RL = 150 Ω to GND and 390 Ω to –VCC , unless otherwise specified.

1 MHz 10MHz 100MHz 1GHz

Figure 3. NE5539 Open-Loop Phase Figure 4. NE5539 Open-Loop Gain

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1 MHz 10MHz 100MHz 300Mhz

Figure 5. Typical Performance Curves

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bandwidth amplifier, the physical circuit is extremely critical. printed circuit board will result in more favorable system operation. An example utilizing a 28 dB non-inverting amp is shown in Figure 6. Figure 6. 28dB Non-Inverting Amp Sample PC Layout

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Figure 10 is approximately +0.1°. termination impedance with a gain of approximately 10 (20 dB).

  1. The input signal was 200 mV and the output 2 V. V

Figure 7. NE5539 Video Amplifier Figure 8. Input Signal Figure 9. Differential Gain <0.5%

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Figure 10. Differential Gain +0.1o Figure 11. Non-Inverting Follower Figure 12. Inverting Follower

Philips Semiconductors Product data NE/SE5539High frequency operational amplifier

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DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1

Philips Semiconductors Product data NE/SE5539High frequency operational amplifier

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SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1

Philips Semiconductors Product data NE/SE5539High frequency operational amplifier

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Philips Semiconductors Product data NE/SE5539High frequency operational amplifier

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Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to:  Koninklijke Philips Electronics N.V. 2002 All rights reserved. Printed in U.S.A. Date of release: 01-02 Document order number: 9397 750 09382 /C0080 /C0115 /C0111/C0110/C0111 /C0115 Data sheet status[1] Objective data Preliminary data Product data Product status[2] Development Qualification Production Definitions This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.