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/C0109 /C0110 /C0114 NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification 1997 Sept 29 INTEGRATED CIRCUITS IC11 Data Handbook

Philips Semiconductors Product specification NE/SA/SE5532/5532AInternally-compensated dual low noise operational amplifier

21997 Sept 29 853-0949 16639

DESCRIPTION

The 5532 is a dual high-performance low noise operational amplifier. Compared to most of the standard operational amplifiers, such as the 1458, it shows better noise performance, improved output drive capability and considerably higher small-signal and power bandwidths. This makes the device especially suitable for application in high-quality and professional audio equipment, instrumentation and control circuits, and telephone channel amplifiers. The op amp is internally compensated for gains equal to one. If very low noise is of prime importance, it is recommended that the 5532A version be used because it has guaranteed noise voltage specifications.

FEATURES

Small-signal bandwidth: 10MHz
Output drive capability: 600Ω , 10VRMS
Input noise voltage: 5nV Hz (typical)
DC voltage gain: 50000
AC voltage gain: 2200 at 10kHz
Power bandwidth: 140kHz
Slew rate: 9V/µs
Large supply voltage range: ±3 to ±20V
Compensated for unity gain PIN CONFIGURATIONS FE, N, D8 Packages D Package1 NOTE: 1. SOL and non-standard pinout. BA OUTPUT B INVERTING INPUT B NON-INVERTING INPUT B OUTPUT A INVERTING INPUT A NON-INVERTING INPUT A TOP VIEW –INA +INA NC –VCC NC NC +INB –INB NC NC NC OUT A 8 9 CC OUT B NC NC TOP VIEW SL00332

Figure 1. Pin Configurations

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 8-Pin Plastic Dual In-Line Package (DIP) 0 to 70°C NE5532N SOT97-1 8-Pin Plastic Dual In-Line Package (DIP) –40°C to +85°C SA5532N SOT97-1 8-Pin Plastic Dual In-Line Package (DIP) –40°C to +85°C SA5532AN SOT97-1 8-Pin Ceramic Dual In-Line Package (CERDIP) 0 to 70°C NE5532FE 0580A 8-Pin Plastic Dual In-Line Package (DIP) 0 to 70°C NE5532AN SOT97-1 8-Pin Ceramic Dual In-Line Package (CERDIP) 0 to 70°C NE5532AF 0580A 8-Pin Ceramic Dual In-Line Package (CERDIP) -55°C to +125°C SE5532FE 0580A 8-Pin Ceramic Dual In-Line Package (CERDIP) -55°C to +125°C SE5532AF 0580A 8-Pin Small Outline Package (SO) 0 to 70°C NE5532AD8 SOT96-1 8-Pin Small Outline Package (SO) –40°C to 85°C SA5532D8 SOT96-1 8-Pin Small Outline Package (SO) –40°C to 85°C SA5532AD8 SOT96-1 8-Pin Small Outline Package (SO) -55°C to +125°C SE5532AD8 SOT96-1 8-Pin Small Outline Package (SO) 0 to 70°C NE5532D8 SOT96-1 8-Pin Small Outline Package (SO) –40°C to 85°C SA5532D8 SOT96-1 8-Pin Small Outline Package (SO) –40°C to 85°C SA5532AD8 SOT96-1 8-Pin Small Outline Package (SO) -55°C to +125°C SE5532D8 SOT96-1 16-Pin Plastic Small Outline Large (SOL) Package 0 to 70°C NE5532D SOT162-1 16-Pin Plastic Dual In-Line Package (DIP) -55°C to +125°C SE5532N SOT38-4

1997 Sept 29 3

Figure 2. Equivalent Schematic (Each Amplifier)

8 D8 package 780 mW

8 N package 1200 mW

8 FE package 1000 mW

16 D package 1200 mW

Diodes protect the inputs against over-voltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential

input voltage exceeds 0.6V. Maximum current should be limited to ±10mA.

Thermal resistances of the above packages are as follows:

Philips Semiconductors Product specification NE/SA/SE5532/5532AInternally-compensated dual low noise operational amplifier

1997 Sept 29 4

DC ELECTRICAL CHARACTERISTICS TA=25°C VS=±15V, unless otherwise specified.1, 2, 3 SYMBOL PARAMETER TEST CONDITIONS SE/5532/5532A NE/SA/5532/5532A UNITSYMBOL PARAMETER TEST CONDITIONS Min Typ Max Min Typ Max UNIT VOS Offset voltage 0.5 2 0.5 4 mV Over temperature 3 5 mV ΔVOS /ΔT 5 5 µV/°C IOS Offset current 100 10 150 nA Over temperature 200 200 nA ΔIOS /ΔT 200 200 pA/°C IB Input current 200 400 200 800 nA Over temperature 700 1000 nA ΔIB/ΔT 5 5 nA/°C 8 10.5 8 16 mA ICC Supply current Over temperature 13 mA VCM Common-mode input range ±12 ±13 ±12 ±13 V CMRR Common-mode rejection ratio 80 100 70 100 dB PSRR Power supply rejection ratio 10 50 10 100 µV/V R L≥2kΩ , VO =±10V 50 100 25 100 V/mV AVOL Large-signal voltage gain Over temperature 25 15 V/mVAVOL Large-signal voltage gain R L≥600Ω , VO =±10V 40 50 15 50 V/mV Over temperature 20 10 V/mV Over temperature ±10 ±12 ±10 ±12 VOUT Output swing R L≥600Ω , VS=±18V ±15 ±16 ±15 ±16 VVOUT Out ut swing Over temperature ±12 ±14 ±12 ±14 V Over temperature ±12 ±12.5 ±10 ±12.5 R IN Input resistance 30 300 30 300 kΩ ISC Output short circuit current 10 38 60 10 38 60 mA NOTES: 1. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential input voltage exceeds 0.6V. Maximum current should be limited to ±10mA. 2. For operation at elevated temperature, derate packages based on the package thermal resistance. 3. Output may be shorted to ground at VS=±15V, TA=25°C Temperature and/or supply voltages must be limited to ensure dissipation rating is not exceeded. AC ELECTRICAL CHARACTERISTICS TA=25°C VS=±15V, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS NE/SA/SE5532/5532A UNITSYMBOL PARAMETER TEST CONDITIONS Min Typ Max UNIT R OUT Output resistance AV=30dB Closed-loop f=10kHz, RL=600Ω 0.3 Ω Voltage-follower Overshoot VIN=100mV P-P 10 % C L=100pF, RL=600Ω AV Gain f=10kHz 2.2 V/mV GBW Gain bandwidth product C L=100pF, RL=600Ω 10 MHz SR Slew rate 9 V/µs VOUT =±10V 140 kHz Power bandwidth VOUT =±14V, RL=600Ω , 100 kHz VCC =±18V

Philips Semiconductors Product specification NE/SA/SE5532/5532AInternally-compensated dual low noise operational amplifier

1997 Sept 29 5

ELECTRICAL CHARACTERISTICS

TA=25°C VS=±15V, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS NE/SE5532 NE/SA/SE5532A UNITSYMBOL PARAMETER TEST CONDITIONS Min Typ Max Min Typ Max UNIT VNOISE Input noise voltage fO =30Hz 8 8 12 nV/√Hz fO =1kHz 5 5 6 nV/√Hz INOISE Input noise current fO =30Hz 2.7 2.7 pA/√Hz fO =1kHz 0.7 0.7 pA/√Hz Channel separation f=1kHz, RS=5kΩ 110 110 dB TYPICAL PERFORMANCE CHARACTERISTICS GAIN (dB) GAIN (dB) TYPICAL VALUES 10 102 103 104 105 106 107 120 -40 f (Hz) V S = +15V VS = +15V TYPICAL VALUES -55 -25 0 25 50 75 100 +125 -55 -25 0 25 50 75 100 +125 1,4 1,2 0,8 0,4 01 0 2 0 T A (oC) TYP IO (mA) II (mA) VIN (V) Vp; -VN (V) Open-Loop Frequency Response Output Short-Circuit Current Input Bias Current Input Commom-Mode Voltage Range TYPICAL VALUES -20 103 104 105 106 107 108 f (Hz) RF = 10kΩ ; RE = 100Ω RF = 9kΩ ; RE = 1kΩ RF = 1kΩ ; RE = ∞ Closed-Loop Frequency Response VS = +15V TYPICAL VALUES 102 103 104 105 106 107 f (Hz) (V) Vo(p-p) Large-Signal Frequency Response (nV Hz ) IO = 0 0 10 20 6 10–2 10–1 10–2 10 10 2 103 104 f (Hz) TYPTYP IP IN (mA) Vp; -VN (V) Supply Current Input Noise Voltage Density TA (oC) SL00334 Figure 3. Typical Performance Characteristics