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GaAs Infrared Emitting Diode SE3450/5450

DESCRIPTION

FEATURES

TO-46 metal can package• Choice of flat window or lensed package• 90¡ or 20¡ (nominal) beam angle option• 935 nm wavelength• Wide operating temperature range (­55¡C to +125¡C) Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger The SE3450/5450 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3450 series has flat window cans providing a wide beam angle, while the SE5450 series has glass lensed cans providing a narrow beam angle. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environment. INFRA-83.TIF OUTLINE DIMENSIONS in inches (mm) 3 plc decimals ±0.005(0.12)Tolerance 2 plc decimals ±0.020(0.51) 2.ANODE 1.CATHODE (TAB) LEADS: .046(1.17) .036(.91) DIA. (.460) .018 MIN. (12.70) .500 (0.36) .015 .140(3.56) .153(3.89) DIA. .137 (3.48) .160 (4.06) .188(4.77) .178(4.52) DIA. DIA. .208(5.28) .219(5.56) .100(2.54)DIA NOM 45° .048(1.22) .028(.71) (CASE) DIM_003a.ds4 SE3450 .046(1.17) .036(.91) DIA. (.460) .018 MIN. (12.70) .500 (0.36) .015 5.08 .200 DIA. .137 (3.48) .160 (4.06) .188(4.77) .178(4.52) DIA. DIA. .208(5.28) .219(5.56) .100(2.54)DIA NOM 45° .048(1.22) .028(.71) .224(5.89) .247(6.27) 2.ANODE 1.CATHODE (TAB) LEADS: (CASE) DIM_003b.ds4 SE5450 Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h24

GaAs Infrared Emitting Diode SE3450/5450

ELECTRICAL CHARACTERISTICS

UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 100 mA Power Dissipation 150 mW [À] Operating Temperature Range -55¡C to 125¡C Storage Temperature Range -65¡C to 150¡C Soldering Temperature (10 sec) 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.43 mW/¡C. SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 25

GaAs Infrared Emitting Diode SE3450/5450 Radiant Intensity vs Angular Displacement (SE3450) gra_017.ds4 Angular displacement - degrees Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -60 -45 -30 -15 0 +15 +30 +45 +60 Fig. 1 Radiant Intensity vs Angular Displacement (SE5450) gra_023.ds4 Angular displacement - degrees Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Fig. 2 Radiant Intensity vs Forward Current gra_018.ds4 Forward current - mA Norm alized radiant intensity - % 0.0 100 150 200 250 0 100 200 300 400 500 Pulsed Fig. 3 Forward Voltage vs Forward Current gra_205.ds4 Forward current - mA Forward voltage - V 1.00 1.05 1.10 1.20 1.25 1.30 1.40 0 10 20 40 60 80 90 10050 1.15 1.35 30 70 Fig. 4 Forward Voltage vs Temperature gra_206.ds4 Temperature - °C Forward voltage - V 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 -50 -25 0 25 50 75 100 125 IF = 100 mA Fig. 5 Spectral Bandwidth gra_005.ds4 Wavelength - nm Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 870 890 910 930 950 970 990 1010 Fig. 6 Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h26

GaAs Infrared Emitting Diode SE3450/5450 Coupling Characteristics SE3450 with SD3443 gra_021.ds4 Window-to-window distance - inches Norm alized light current 0.0 0.2 0.4 0.6 0.8 1.0 Fig. 7 Coupling Characteristics SE5450 with SD5443 gra_024.ds4 Lens-to-lens distance - inches Norm alized light current 0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 7 9 1 3 5 8 Fig. 8 Radiant Intensity vs Case Temperature gra_022.ds4 Case temperature - °C Norm alized radiant intensity 0.1 0.2 0.3 0.4 0.5 1.0 2.0 3.0 4.0 5.0 -75 -50 -25 0 25 50 75 100 125 Normalized to IF = 100 mA TA = 25 °C Fig. 9 All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 27