DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance N - Channel VDS= 30V RDS(ON), Vgs@10V, Ids@8.5A = 38mΩ RDS(ON), Vgs@4.5V, Ids@5A = 52mΩ High Power and Current Handling Capability Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) ParameterSymbol Limit Unit Drain-Source VoltageVDS 30 V Gate-Source VoltageVGS ± 20 Continuous Drain CurrentID 6.9 A Pulsed Drain Current 1)IDM 30 Maximum Power Dissipation TA = 25oCPD W TA = 75oC 1.44 Operating Junction and Storage Temperature RangeTJ, Tstg -55 to 150 oC Junction-to-Case Thermal Resistance RθJC 24 oC/W Junction-to-Ambient Thermal Resistance (PCB mounted) 2)RθJA 62.5 Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing Device Marking Shipping 3000/Tape&ReelSE4812LT1 N48

Ordering Information

2012-10 WILLAS ELECTRONIC CORP. SOT-23 SE4812LT1

ELECTRICAL CHARACTERISTICS

ParameterSymbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown VoltageBVDSS VGS = 0V, ID 30 = 250uA V Drain-Source On-State ResistanceRDS(on) VGS D 35.0 = 4.5V, I = 5A 52.0 mΩ Drain-Source On-State ResistanceRDS(on) VGS D 22.0 = 10V, I = 8.5A 38.0 Gate Threshold VoltageVGS(th) VDS =VGS, ID 1 = 250uA 1.5 3 V Zero Gate Voltage Drain CurrentIDSS VDS 1 = 24V, VGS = 0V u A Gate Body LeakageIGSS VGS + 100 = ± 20V, VDS = 0V nA Forward Transconductancegfs VDS = 5V, ID 15.4 = 6.9A S Dynamic3) Total Gate ChargeQg VDS = 15V, ID = 8.5A VGS = 10V 13 20 nCGate-Source ChargeQgs 4.2 Gate-Drain ChargeQgd 3.1 Turn-On Delay Timetd(on) VDD = 15V, RL = 15Ω ID = 1A, VGEN = 10V RG = 6Ω ns Turn-On Rise Timetr 14 Turn-Off Delay Timetd(off) 30 Turn-Off Fall Timetf 5 Input CapacitanceCiss VDS = 15V, VGS = 0V f = 1.0 MHz 610 pFOutput Capacitance Coss 100 Reverse Transfer CapacitanceCrss 77 Source-Drain Diode Max. Diode Forward CurrentIS 3A Diode Forward Voltage VSD IS = 1A, V 1.3GS = 0V V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% 2012-10 WILLAS ELECTRONIC CORP. 30V N-Channel Enhancement-Mode MOSFET SE4812LT1

0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 2012-10 WILLAS ELECTRONIC CORP. 30V N-Channel Enhancement-Mode MOSFET SE4812LT1 Dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .086(2.1 0) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20)