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SOT-23 Plastic-Encapsulate MOSFETS P-Channel Enhancement Mode Field Effect Transistor General Description The SE3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: 3407 Maximum ratings (T a=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -4.1 A Power Dissipation PD 350 mW Thermal Resistance from Junction to Ambient RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55~+150 ℃ SOT-23 1. GATE 2. SOURCE 3. DRAIN 2012-10 WILLAS ELECTRONIC CORP. SE3407
Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static characteristics Drain-source breakdown voltage BV DSS VGS = 0V, ID =-250µA -30 V Zero gate voltage drain current I DSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current IGSS VGS =±20V, VDS = 0V ±100 nA VGS =-10V, ID =-4.1A 60 m Ω Drain-source on-resistance (note 1) R DS(on) VGS =-4.5V, ID =-3A 87 m Ω Forward tranconductance (note 1) g FS VDS =-5V, ID =-4A 5.5 S Gate threshold voltage VGS(th) VDS =VGS, ID =-250µA -1 -3 V Diode forward voltage (note 1) VSD I S=-1A,VGS=0V -1 V Dynamic characteristics (note 2) Input capacitance Ciss 700 pF Output capacitance Coss 120 pF Reverse transfer capacitance Crss VDS =-15V,VGS =0V,f =1MHz 75 pF Switching Characteristics (note 2) Turn-on delay time td(on) 8.6 ns Turn-on rise time tr 5.0 ns Turn-off delay time td(off) 28.2 ns Turn-off fall time tf VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω 13.5 ns Notes: 1. Pulse test: Pulse width ≤300µs, duty cycle ≤2%. 2. These parameters have no way to verify. 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE3407
-1E-5 -1E-4 -1E-3 -0.01 -0.1 -10 -0 -1 -2 -3 -4 -0 -2 -4 -6 -8 -10 100 -2 -4 -6 -8 -10 100 120 140 -0 -1 -2 -3 -4 -5 -10 -15 -20 -25 IS —— VSD Ta=25℃ SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) Ta=25℃ Transfer Characteristics DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) VGS=-4.5V VGS=-10V Ta=25℃ ID——RDS(ON) ON-RESISTANCE RDS(ON) (mΩ) DRAIN CURRENT ID (A) Typical Characteristics VGS——RDS(ON) Ta=25℃ ID=-4.3A ON-RESISTANCE RDS(ON) (mΩ) GATE TO SOURCE VOLTAGE VGS (V) VGS=-10V -8V -5V VGS=-4.5V VGS=-4V VGS=-3.5V Output Characteristics DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE3407
Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE3407