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SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION
The SE3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.The source leads are separated to allow a Kelvin connection to the source,which may be used to bypass the source inductance. MARKING: R4 Maximum ratings (T a=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-source voltage VDS 30 V Gate-source voltage VGS ±20 V Continuous drain current (t ≤10s) ID 5.8 A Pulsed drain current * I DM 30 A Power dissipation PD 0.35 W Thermal resistance from junction to ambient RθJA 357 ℃/W Junction temperature TJ 150 ℃ Storage temperature Tstg -55~ 150 ℃ * Repetitive rating : Pulse width limited by maximum junction temperature. SOT-23 1. GATE 2. SOURCE 3. DRAIN 2012-0 WILLAS ELECTRONIC CORP.
Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA 30 V Zero gate voltage drain current IDSS VDS =30V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Gate threshold voltage VGS(th) VDS =VGS, ID =250µA 1 3 V VGS =10V, ID =5.8A 28 m Ω Drain-source on-resistance (note 1) R DS(on) VGS =4.5V, ID =4.8A 42 m Ω Forward tranconductance (note 1) g FS VDS =5V, ID =5.8A 5 S Diode forward voltage VSD I S=1A 1 V DYNAMIC PARAMETERS (note 2) Input capacitance Ciss 820 pF Output capacitance Coss 118 pF Reverse transfer capacitance Crss VDS =15V,VGS =0V,f =1MHz 85 pF Gate resistance Rg V DS =0V,VGS =0V,f =1MHz 1.5 Ω SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) 6.5 ns Turn-on rise time tr 3.1 ns Turn-off delay time td(off) 15.1 ns Turn-off fall time tf VGS=10V,VDS=15V, RL=2.6Ω,RGEN=3Ω 2.7 ns Note : 1. Pulse Test : Pulse width ≤300µs, duty cycle≤0.5%. 2. These parameters have no way to verify. SOT-23 Plastic-Encapsulate MOSFETS 2012-0 WILLAS ELECTRONIC CORP.
0.01 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 02468 1 0 3456789 1 0 70Typical Characteristics 6V10V 4.5V VGS=4V VGS=3.5V VGS=3V Output Characteristics DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) VSDIS —— SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) Ta=25 o C Transfer Characteristics 1.3 VGS=10V VGS=4.5V Ta=25 o C IDRDS(ON) —— ON-RESISTANCE RDS(ON) (mΩ) DRAIN CURRENT ID (A) Ta=25 o C ID=2.8A ID=3.6A VGSRDS(ON) —— ON-RESISTANCE RDS(ON) (mΩ) GATE TO SOURCE VOLTAGE VGS (V) 2012-0 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS
Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-0 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS