SE3401

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

SOT-23 Plastic-Encapsulate MOSFETS P-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability MARKING: R1 Maximum ratings ( T a=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -4.2 A Power Dissipation PD 350 mW Thermal Resistance from Junction to Ambient ( t<5s)R θJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ SOT-23 1. GATE 2. SOURCE 3. DRAIN G D S 2012-10 WILLAS ELECTRONIC CORP. SE340 z

Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =-250µA -30 V Zero gate voltage drain current I DSS VDS =-24V,VGS = 0V -1 µA Gate-source leakage current I GSS VGS =±12V, VDS = 0V ±100 nA On characteristics VGS =-10V, ID =-4.2A 65 m Ω VGS =-4.5V, ID =-4A 75 m Ω Drain-source on-resistance (note 1) RDS(on) VGS =-2.5V,ID=-1A 90 mΩ Forward tranconductance (note 1) gFS VDS =-5V, ID =-5A 7 S Gate threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.7 -1.3 V Dynamic characteristics (note 2) Input capacitance Ciss 954 pF Output capacitance Coss 115 pF Reverse transfer capacitance C rss VDS =-15V,VGS =0V,f =1MHz 77 pF Switching characteristics (note 2) Turn-on delay time td(on) 6.3 ns Turn-on rise time tr 3.2 ns Turn-off delay time td(off) 38.2 ns Turn-off fall Time tf VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω 12 ns Drain-source diode characteristics and maximum ratings Diode forward voltage (note 1) V SD I S=-1A,VGS=0V -1 V Note : 1. Pulse Test : Pulse width ≤300µs, duty cycle≤2%. 2. These parameters have no way to verify. 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE340

-1E-5 -1E-4 -1E-3 -0.01 -0.1 -10 -0 -1 -2 -3 -4 -5 -10 -15 -20 -25 -0 -2 -4 -6 -8 -10 100 120 -0 -2 -4 -6 -8 -10 100 SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) Transfer Characteristics DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) VGS=-3.0VVGS=-10V VGS=-4.5V Output Characteristics VGS=-2.5V VGS=-2.0V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) VSD ——IS Ta=25℃ Pulsed Ta=25℃ Pulsed Ta=25℃ Pulsed Ta=25℃ Pulsed Ta=25℃ Pulsed VGS=-2.5V VGS=-4.5V VGS=-10V —— I DRDS(ON) ON-RESISTANCE RDS(ON) (mΩ) DRAIN CURRENT ID (A) ID=-2A Typical Characteristics —— VGSRDS(ON) ON-RESISTANCE RDS(ON) (mΩ) GATE TO SOURCE VOLTAGE VGS (V) 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE340

Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE340