SE310 NEC | Alldatasheet
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Technical content
NE C ELECTRONICS INC 30E D mm@ 427525 0029856 4 Mm Ty R-Y “ / LIGHT EMITTING DIODE GaAs INFRARED EMITTING DIODE
DESCRIPTION
The SE310 is a GaAs (Gallium Arsenide) Infrared Emitting Diode which is mounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm. It is suitable for a optical switch with com- bination of the PH110 PACKAGE DIMENSIONS FEATURES in millimeters © Small size plastic molded package. 3.3202 © High output power. © Long life, rar © Good linearity. Lf | sie) © Spectrally matched to silicon sensors. Kom. a3) 2.3202 \\ 605 22202] APPLICATIONS an | i © Light Source for Electro optical switches. LX ' ax © Paper Tape and Punch Card Readers, Tr !} © Optical encoders. 3 3 @ Photochoppers, Isolator. 7 3 3 © High speed Optoelectronic Data Links. its TC $ Tif ABSOLUTE MAXIMUM RATINGS - (7 'LS-@! | Maximum Power Dissipation (Tg=25 °C) P 100 mW ns noe Maximum Forward Current (Tg=25 °C) le 60 mA 0.8, i 28 Maximum Reverse Voltage (Ta=25 °C) Ve 5.0 Vv A | Maximum Temperatures 06 tH al Junction Temperature Tj 100 °c os B| Storage Temperature Tatg 4010 +100 °C al | | 1 254 1. Anode
2 Cathode
ELECTRO-OPTICAL CHARACTERISTICS (T,=25 °C) | Fowarsvotue Ve] ftw mm { :
NE € ELECTRONICS INC 30E D M@ 6427525 0029857 &b SE310 T-41-11 TYPICAL CHARACTERISTICS (T,=25 °C) ) . MAX. FORWARD CURRENT vs. FORWARO CURRENT vs. SMdidNT NewesaTURe FOnwano VOLTAGE 9] 7 ee FA Se ee ese ; jos Fla Kt PN (J PS eee oe Se ee a eae oe Ce Wo Sa a a ° 20 40 Cy 80 100 Ve —Forward Voltage—V Ty-Ambent Temperature—"C RELATIVE LUMINOUS INTENSITY vs. RELATIVE LUMINOUS INTENSITY vs FoRWAnO CURRENT SMBlewt TEMPERATURE “ rs pT —— I j manane sURES 2 =] PSS SS i AL <<< | ) ool a Sani ow we ToT TaOTIO le Ta—Ambient Temperature ~"C sscTRal oreTamUTION SPATIAL DISTRIBUTION 0.8) oo - ne, ~ ot ge Lag: £ od Se. rr nS 3 |_| wa ai “ger: 02 <| 00 LEN fe ol ° 900 920 940 960 980 1000 A—Wavelength-am_