SE3080A SINO-IC | Alldatasheet
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VDS =3 0 V RDS(ON) =4 . 5 mΩ @V GS=10V(SE3080A) RDS(ON) =4 . 5 mΩ @V GS=10V(SE3080K) Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Drain Current Continuous ID A Pulsed 170 Total Power Dissipation @TA=25℃ PD 83 W Derating factor 0.56 W/℃ Single pulse avalanche energy E AS 285 mJ Operating Junction Temperature Range T J -55 to 175 ℃ Thermal Resistance Symbol Parameter Typ Max Units RθJC Thermal Resistance Junction to Case - 1.8 ℃/W
ShangHai Sino-IC Microelectronic Co., Ltd. 2. SE3080A/K Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage I D=250μA, VGS=0 V 30 V IDSS Drain to Source Leakage Current V DS=3 0 V ,VGS=0V 1 μA IGSS Gate-Body Leakage Current V GS=20V 100 nA VGS(th) Gate Threshold Voltage V DS=V GS,I D=250μA1 1 . 6 3 V RDS(ON) SE3080A Static Drain-Source On-Resistance VGS=10V, ID=30A - 4.5 6.5 m Ω VGS=4.5V, ID=24A - 7 9.5 m Ω RDS(ON) SE3080K Static Drain-Source On-Resistance VGS=10V, ID=30A - 4.5 6.5 m Ω VGS=4.5V, ID=24A - 7.5 10 m Ω DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=15V, f=1MHz 2330 pF Coss Output Capacitance 460 pF Crss Reverse Transfer Capacitance 230 pF SWITCHING PARAMETERS Qg Total Gate Charge2 VGS=10V, VDS=30V, ID=30A 51 nC Qgs Gate Source Charge 14 nC Qgd Gate Drain Charge 11 nC td(on) Turn-On Delay Time V GS=10V, VDS=10V, RGEN=2.7Ω ID=30A 20 ns td(off) Turn-Off Delay Time 60 ns td(r) Turn-On Rise Time 15 ns td(f) Turn-Off Fall Time 10 ns
ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE3080A/K Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE3080A/K Typical Characteristics
ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE3080A/K P a c k a g eO u t l i n eD i m e n s i o n TO-220
ShangHai Sino-IC Microelectronic Co., Ltd. 6. SE3080A/K TO-252 The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net