SE3080 WILLAS | Alldatasheet

Document overview

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Technical content

Features

  • VDS= 30V，ID = 80A RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 5V)
  • High density cell design for ultra low Rdson
  • Fully characterized Avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation Application
  • Power switching application
  • Hard Switched and High Frequency Circuits
  • Uninterruptible Power Supply Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current Continuous ID 80 A Drain Current Continuous（Tc=100℃） ID（100℃） 50 A Pulsed Drain Current IDM 170 A Total Power Dissipation PD 83 W Single pulse avalanche energy（Note 5） EAS 150 mJ Operating Junction Temperature Range TJ -55 to 175 °C Thermal Characteristics Parameter Symbol Typ Max Units Thermal Resistance ,Junction-to-case（Note 2） RθJC 1.8 - °C/W Revision:A WILLAS RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H"● WILLAS ELECTRONIC CORP.2012-07

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=15V,VG=10V,L=1mH,Rg=25Ω Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0 V 1 μA IGSS Gate-Body leakage current VDS=0 V, VGS=±20 V ±100 nA ON CHARACTERISTICS (Note 3) VGS(th) Gate Threshold Voltage VDS=VGS ID=250uA 1 1.5 3 V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A 5.5 7.5 mΩ VGS=5V, ID=24A 7.5 10 mΩ |Yfs| Forward Transfer Admittance VGS = 5 V, IS =24A 20 S DYNAMIC CHARACTERISTICS (Note 4) Ciss Input Capacitance VGS=0V, VDS=15V, f=1MHz 2330 pF Coss Output Capacitance 460 pF Crss Reverse Transfer Capacitance 230 pF SWITCHING CHARACTERISTICS (Note 4) td(on) Turn-on Delay Time VDD=10V,ID=30A VGS=10V,RGEN=2.7Ω 20 nS tr Turn-on Rise Time 15 nS td(0ff) Turn-off Delay Time 60 nS tf Turn-off fall Time 10 nS Qg Total Gate Charge VDD=10V,ID=30A VGS=10V 51 nC Qgs Gate-Source Charge 14 nC Qgd Gate-Drain Charge 11 nC DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage(Notes 3) VGS=0V,IS=24A 1.2 V IS Diode Forward Current(Notes 2) 80 A trr Reverse Recovery Time TJ=25℃,IF=80A di/dt=100A/μS(Note 3) 32 50 nS Qrr Reverse Recovery Charge 12 20 nC WILLAS WILLAS ELECTRONIC CORP.2012-07

1 EAS test Circuits

2）Gate charge test Circuit: 3）Switch Time Test Circuit： WILLAS WILLAS ELECTRONIC CORP.2012-07

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) WILLAS WILLAS ELECTRONIC CORP.2012-07

WILLAS ELECTRONIC CORP.2012-07