SE307 NEC | Alldatasheet
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Technical content
NE C ELECTRONICS INC 30E D MM b¥e7SeS 0029852 7? MH 7-H) -Il / LIGHT EMITTING DIODE GaAs INFRARED EMITTING DIODE
DESCRIPTION
The SE307-C is a GaAs (Gallium Arsenide) Infrared Emitting Diode which is mounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm.
FEATURES
PACKAGE DIMENSIONS. © Economical. in millimeters © High output power. Dark bive © Long Life. fim, #4et0s © Good linearity. Resin Ffo46t03 © Spectrally matched to silicon sensors. ig © Long lead. le i os FETs = 36 APPLICATIONS 41.05) V7 ca ’ © Paper Tape and Punch Card Readers. B06 YS SE © Light source for smoke detector. eS © Optical encoders. D | © Photochoppers, Isolator. acstamax, CLS Q © Light source for remote control. B:90.8 MAX. RE a a ABSOLUTE MAXIMUM RATINGS
2 Maximum Power Dissipation (Tg = 25 °C) P 150 mw
: 3G 1. Anode Maximum Forward Current (Tq = 25 °C) Ip 100 mA the sq 2 Cathode Maximum Pulse Forward Current (Ta = 25°C) Ipp* 102A Maximum Reverse Voltage (Ta = 25 °C) Va 5.0 v Maximum Temperatures Junction Temperature Tj +100 °c Storage Temperature Treo 40 to +100 °C Operating Temperature Topt 30 to +85 °C ELECTRO-OPTICAL CHARACTERISTICS (Ty = 25 °C) Peak Emission Wavelength peak 940 am 1p = 80 mA Spectral Line Half Width Je 1 50 am Ip = 50mA ‘Output Power le * 2 | 30 : mWist: Ip © 50mA Light Turn-On and Turn-Off ton toff* tT i ry * f= 1.0 kHz, Duty Cycle 1%
NE C ELECTRONICS INC 30E D MM 6427525 0029853 9 mm SE307-C eS EBOT-C TH41-11 ~ TYPICAL CHARACTERISTICS (T, = 25°C) ) Max. FORWARD CURRENT vs FORWARD CURRENT RELATIVE INTENSITY vs, Asie PARA RORE FORWARD VOLTAGE Reletewt reuacear Ose vay be i ; ESeSSSeeS Poo 100) © Creer rrr & zo . i ihe Pe === ——_
74 S GES 2S
2° Bled tla lalla 303 a a x a —=======—= Tq ~Ambuent Temperature 3 + eS SD a ° 20 “0 Cy 80 (100 10 Dry 20 25 30 Ta~Ambient Tomperature—"C Vp-Forward Voltage-V PULSE FORWARD GURRENT SPECTRAL DISTRIBUTION SPATIAL DISTRIBUTION 19 3 SS |) PS 16) 4 08 pect ioetg \\ > PO a wee pace LEI pol Re 3 2 7 5 06 5 > < <j Poot te 2 p< Sere 24
7 Zi] E | BK SETS Sse
4 2 2 LPR RMAOXNT, Wes CEN RNIB a 80" 0 00100600800 “T6501200 iy |_| sol Ne ) Ipp~Pulse Forward Current mA 900° 920 940960 $80” 1000 ° A-Wavelongth~nm HANDLING PRECAUTIONS: 1, The full resin-moided LED lamps have generally a little mechanical and thermal strength than other resin-molded semi- conductor devices as they have less additives. Therefore please note on the following points, {a) Soldering of teads should be made at the point 5 mm or more from the root of the leads at 260 °C and within 5s, (b) If the temperature of the molded portion rises in addition to the residual stress between the leads, the Possibility ‘that open or short circuit occurs due to the deformation or destruction of the resin will increase. 2, On cleaning the device: (a) Cleaning with unsuitable solvent may impair the resin of the package and the following solvents should be used at the temperature of less than 45 °C and for less than 3 minutes of immersion time, Ethanol, Methanol \\sopropyl-aicohol . {b) Ultrasonic cleaning will add some stress on devices, The degree of the stress differs depending on the oscillation output power, the size of the PCB and the mounting methods of the devices, therefore it should be confirmed by making an experiment at actual conditions that the cleaning does not have any problem on the devices.