SE306 NEC | Alldatasheet
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NE C ELECTRONICS INC 30E D M@@ b4e7Se2S 0029850 3 MM T-4)-\\I 7 / LIGHT EMITTING DIODE es GaAs INFRARED EMITTNG DIODE ee PACKAGE DIMENSIONS The SE306 is a GaAs(Gallium Arsenide) Infrared LED in a plastic in muiimevers molded package, and very suitable for a detecter of a photo interrupter, Ps e On forward bias, it emits a spectrally narrow band of radiation peaking EN at 940 nm. ft a i re 4-RO.S * Ros | ae . | — ~ 7 ; = l =a a . F I 0.48 of] 0} ® 2.6 ‘ ABSOLUTE MAXIMUM RATINGS (Ty =25 °C) oO Power Dissipation Pp 100 mW Forward Current Ip 50 mA cathode Reverse Voltage Va 5 v D Anode Junction Temperature 7; 100 °c ® Storage Temperature Tyg «= 40 to #100 °C. ELECTRICAL CHARACTERISTICS (Ty = 25 °C) Peak Emission Wavelength S Apeek + 940 t onm | ipst0ma Output Power : le o2 | os | mW: tp= 10 mA H
NE C ELECTRONICS INC BOE D M@@ 6427525 0029851 5 mm SE306 . T-41-11 TYPICAL CHARACTERISTICS (T= 25 °C) 4 GA A ORWARG CURRENT A FORWARD CURRENT vs. FORWARD VOLTAGE « 60 ro | tT it : oe io PeiNE | tI jo PX es F a } 20 “TIN a a! er” eee” ee ee 008 101820 Tac Ambient Tenpecature Ver Forward Voltage=V RELATIVE OUTPUT POWER we. RELATIVE OUTPUT POWER ve, FORWARD CURRENT AMBIENT TEMPERATURE | | | | = 2 \\ a ae 4 io i | I ' heehee H —0=— rr rr ) ola cz0 62040 G0 80 100 120 140 : IpForvatd Cutrent=mA Ta—Ambant Temperature=C SPECTRAL DISTRIBUTION 02}-—}-—+ TaN : [AT | i or “300920 5409609801000 A-Wawiengh—am,