SE301 NEC | Alldatasheet
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Technical content
NE C ELECTRONICS INC 30E D MM b427525 0029844 & MM TH /-) GaAs INFRARED EMITTING DIODE INDUSTRIAL USE SS
DESCRIPTION
The SE3O1A is a GaAs (Gallium Arsenide) Infrared Emitting Diode which is mounted on a TO-18 hermetically seated header with a glass lens. On forward bias, it emits a spectrally narrow band of radiation peaking at 940nm, The close wavelength match of this device to silicon sensors makes it ideally suited for all source-sense applications, Its low cost and volume pro- ducibility open new areas of use anywhere an infrared source is desirable,
FEATURES
in millimeters (inches) ‘@ Low cost. snatt © High output power - 3mW MIN. Toe cri © Fast switching time er [ct . WH ne pou © Long life-solid state reliability. | I © Compact, rugged, lightweight. 7]. |! il © Spectrally matched to silicon sensors. Fi APPLICATIONS asd iti © Paper tape and punch card readers. * ob il © Optical encoders, Tr. © Photochoppers. © High speed optoelectronic data links. coouy NX Le \\ ABSOLUTE MAXIMUM RATINGS 2f J) Maximum Power Dissipation (Ta = 25°C) Pe 180 mW Maximum Forward Current (Ts = 25°C) Ip 100 mA (Bottom View) 3: Satnode Maximum Pulse Forward Current (Ta=25°C) 'FP* 1.0 A nodatCosa) * Maxi R Voitege (Ta = 25°C) vi x v * Soldering conditions are at 260°C or less Malnen teen R 5° Within Sec. at 1.5 mm or farther from feximum Temperetures the case, Junction Temperature A 128 °c Storage Temperature Trg 65004125 °C ELECTRO-OPTICAL CHARACTERISTICS (Ta = 25°C) [Fores vote Ve | ta as | eeoma [Rue Fora Vatu vers —*dY 0s pnts | Peak Emission Waveengtm | Apeae ||P am igesoma “t= LO kHz, duty cycle 1%
NE C ELECTRONICS INC 306 >) mm b427525 0029845 T mm 41-11 SE301A T SSS TYPICAL CHARACTERISTICS (Ta= 25°C) } FORWARD CURRENT ws. MAX. FORWARD CURRENT v4. FORWARD VOLTAGE AMBIENT TEMPERATURE Pr) me onpe 129] LC) 190 i i fr) . Peet a) j 3 i Cr) eee jw T 40] —— -f— gz 40 ° ° OOS 101s 20 as o 20 #0 60 80 100 120 Ve ~Forward Votage =v Ta-Amoient Temperature RELATIVE OUTPUT POWER vs. RELATIVE OUTPUT POWER vs. AMBIENT TEMPERATURE FORWARD CURRENT shoe ee o 12 Fe re 10 z D1 fem eee a Foe oosp oop, o2 Poi f vor =20 0 20 40 60 60 100 120 °o 0406080100120 Ta Amoient Temperature="C “+ 7Faeward Curent mma SPECTRAL DISTRIBUTION SPATIAL DISTRIBUTION ia i— zo" at A \\. | : oP “S 2 08 ee E08) ae Phy i woe Eee % Lo Ee 7 3 . . ! . $08 op ee + |. ~ NS 02 a oe “TET 900920 380360 380 1000 os 02008 04 staveiengin =n