SE2600S SIGE | Alldatasheet

Document overview

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Technical content

Features

‰ Integrates SP3T Switch and LNA with by-pass mode ‰ 12 dB gain, ‰ 1.8 dB NF ‰ 0.5 dB Bluetooth path loss ‰ 1.07x1.05x 0.38mm, 250 um pitch, SnAg solder bump ‰ Lead free, Halogen free and RoHS compliant

Ordering Information

Part No. Package Remark SE2600S 11 pin CSP Samples SE2600S-R 11 pin CSP Tape and Reel SE2600S-EK1 N/A Evaluation kit Product Description The SE2600S is a single chip integrated front-end module (FEM) with a Bluetooth port to complement WLAN chipsets with integrated Power Amplifier. The FEM integrates SP3T Switch and Low Noise Amplifier with bypass mode in an ultra compact package. It is capable of switching between WLAN RX, WLAN TX and Bluetooth™ Functional Block Diagram RFC BT TX RX Vc1 Vc2 Vc3 Von 1234 Vdd Figure 1: Functional Block Diagram DST-00292 ƒ Rev 1.4 ƒ October-09-2009 1 of 12

2.4 GHz WLAN Switch/LNA Front End

http://www.sige.com Email: sales@sige.com Customer Service Locations: North America: Hong Kong

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Ottawa ON K2H 8K7 Canada Fax: +852 3579 5450 Phone: +1 613 820 9244 San Diego Fax: +1 613 820 4933 Phone: +1 858 668 3541 (ext. 226) Fax: +1 858 668 3546 United Kingdom Phone: +44 1279 464217 Fax: +44 1279 464201 Product Preview The datasheet contains information from the product concept specification. SiGe Semic onductor, Inc. reserves the right to chang e information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. re serves the ri ght to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor, Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise u nder any patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this pu blication are subject to change without notice. This publication supersedes and replaces all in formation previously supplied. SiGe Semiconductor, Inc. products are NOT authori zed for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor, Inc. Copyright 2009 SiGe Semiconductor, Inc. All Rights Reserved DST-00292 ƒ Rev 1.4 ƒ October-09-2009 12 of 12