SE2527L SIGE | Alldatasheet

Document overview

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Technical content

Features

ƒ Single 3.3 V Supply Operation o 21 dBm, EVM = 3 %, 802.11g, OFDM 54 Mbps o 24 dBm, ACPR < -32 dBc, 802.11b ƒ Dual Supply Operation o 23 dBm, EVM = 3 %, 802.11g, OFDM 54 Mbps o 25 dBm, ACPR < -32 dBc, 802.11b ƒ 32 dB Gain ƒ Pin for pin compatible to the SE2525L ƒ Integrated temperat ure compensated power detector ƒ Integrated power amplifier enable pin (V EN) ƒ Lead Free and RoHS compliant ƒ Small package: 16 pin 4 mm x 4 mm x 0.9 mm QFN

Ordering Information

Part Number Package Remark SE2527L 16 Pin QFN Samples SE2527L-R 16 Pin QFN Tape and Reel Product Description The SE2527L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The device incorporates a power detector for closed loop monitoring of the output power. The SE2527L also offers a high power mode by operating at 5 V. This pr ovides an extra 2 dB of improved EVM performance. The SE2527L includes a digital enable control for device on/off control. The device is pin for pin compatible to SiGe’s SE2524L, allowing both devices to share the same application board with only a few component changes required. This provides users with both a high and low power solution without changing the layout. The SE2527L temperature compensated power detector is highly immune to mismatch at its output with less than 1.5 dB of variation with a 2:1 mismatch. Functional Block Diagram V CC0 V DET OUT OUT/V CC3I N V CC1 V CC2 Stage 2Stage 1 Stage 3 Bias Generator Detector V EN Figure 1: Functional Block Diagram 157-DST-01 ƒ Rev 1.3 ƒ May-26-2009 1 of 2 QA041206

2.4 GHz Power Amplifier with Power Detector

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Ottawa ON K2H 8K7 Canada Fax: +852 3579 5450 Phone: +1 613 820 9244 San Diego Fax: +1 613 820 4933 Phone: +1 858 668 3541 (ext. 226) Fax: +1 858 668 3546 United Kingdom Phone: +44 1279 464217 Fax: +44 1279 464201 Product Preview The datasheet contains information from the product concept specification. SiGe Semic onductor, Inc. reserves the right to chang e information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. re serves the ri ght to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor, Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise u nder any patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this pu blication are subject to change without notice. This publication supersedes and replaces all in formation previously supplied. SiGe Semiconductor, Inc. products are NOT authori zed for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor, Inc. Copyright 2009 SiGe Semiconductor, Inc. All Rights Reserved 157-DST-01 ƒ Rev 1.3 ƒ May-26-2009 2 of 2 QA041206