SE2470-001 HONEYWELL-ACC | Alldatasheet
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Technical content
AlGaAs Infrared Emitting Diode SE2470
DESCRIPTION
FEATURES
Miniature, hermetically sealed, pill style, metal can package 18¡ (nominal) beam angle• Wide operating temperature range (55¡C to +125¡C) Higher power output than GaAs at equivalent drive currents Ideal for direct mounting to printed circuit boards• 880 nm wavelength• Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington The SE2470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. DIM_002.ds4 INFRA--1.TIF OUTLINE DIMENSIONS in inches (mm) 3 plc decimals ±0.005(0.12)Tolerance 2 plc decimals ±0.020(0.51) Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h20
AlGaAs Infrared Emitting Diode SE2470
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 75 mA Power Dissipation 125 mW [À] Operating Temperature Range -55¡C to 125¡C Storage Temperature Range -65¡C to 150¡C Soldering Temperature (10 sec) 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.19 mW/¡C,when soldered into a double sided printed circuit board. SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 21
AlGaAs Infrared Emitting Diode SE2470 Radiant Intensity vs Angular Displacement gra_111.ds4 Angular displacement - degrees Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Fig. 1 Radiant Intensity vs Forward Current gra_016.ds4 Forward current - mA Norm alized radiant intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 2 Forward Voltage vs Forward Current gra_204.ds4 Forward current - mA Forward voltage - V 1.0 1.1 1.2 1.4 1.5 1.6 1.8 0 10 20 30 50 60 70 8040 1.3 1.7 Fig. 3 Forward Voltage vs Temperature gra_202.ds4 Temperature - °C Forward voltage - V 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 IF = 20 mA Fig. 4 Spectral Bandwidth gra_011.ds4 Wavelength - nm Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 760 800 840 880 920 960 1000 Fig. 5 Coupling Characteristics with SD2440 gra_015.ds4 Lens-to-lens separation - inches Norm alized light current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 6 Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h22
AlGaAs Infrared Emitting Diode SE2470 Normalized Power Output vs Temperature gra_131.ds4 Norm alized power output 1.0 1.2 1.4 1.6 1.8 2.0 TA - Ambient temperature - (°C) -50 -25 0 +25 +50 +75 +100 +125 IF = 50 mA IF = 20 mA Fig. 7 All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 23