SE2460 HONEYWELL | Alldatasheet
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Technical content
GaAs Infrared Emitting Diode SE2460
DESCRIPTION
FEATURES
Miniature, hermetically sealed, pill style, metal can package 18¡ (nominal) beam angle• Wide operating temperature range (55¡C to +125¡C) Ideal for direct mounting to printed circuit boards• 935 nm wavelength• Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington The SE2460 is a gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. DIM_002.ds4 INFRA--1.TIF OUTLINE DIMENSIONS in inches (mm) 3 plc decimals ±0.005(0.12)Tolerance 2 plc decimals ±0.020(0.51) Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h16
GaAs Infrared Emitting Diode SE2460
ELECTRICAL CHARACTERISTICS
UNITS TEST CONDITIONSMINPARAMETER SYMBOL TYP MAX ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 75 mA Power Dissipation 125 mW [À] Operating Temperature Range -55¡C to 125¡C Storage Temperature Range -65¡C to 150¡C Soldering Temperature (10 sec) 260¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.19 mW/¡C,when soldered into a double sided printed circuit board. SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 17
GaAs Infrared Emitting Diode SE2460 Radiant Intensity vs Angular Displacement gra_111.ds4 Angular displacement - degrees Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Fig. 1 Radiant Intensity vs Forward Current gra_014.ds4 Forward current - mA Norm alized radiant intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 2 Forward Voltage vs Forward Current gra_203.ds4 Forward current - mA Forward voltage - V 1.00 1.05 1.10 1.20 1.25 1.30 1.40 0 10 20 30 50 60 70 8040 1.15 1.35 Fig. 3 Forward Voltage vs Temperature gra_200.ds4 Temperature - °C Forward voltage - V 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 -50 -25 0 25 50 75 100 125 IF = 20 mA Fig. 4 Spectral Bandwidth gra_005.ds4 Wavelength - nm Relative intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 870 890 910 930 950 970 990 1010 Fig. 5 Coupling Characteristics with SD2440 gra_015.ds4 Lens-to-lens separation - inches Norm alized light current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 6 Honeywell reserves the right to make changes in order to improve design and supply the best products possible.h18
GaAs Infrared Emitting Diode SE2460 Normalized Power Output vs Temperature gra_131.ds4 Norm alized power output 1.0 1.2 1.4 1.6 1.8 2.0 TA - Ambient temperature - (°C) -50 -25 0 +25 +50 +75 +100 +125 IF = 50 mA IF = 20 mA Fig. 7 All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 19