SE2425U SIGE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
Features
Integrated input and inter-stage match +25 dBm GFSK Output Power +19.5 dBm 8DPSK Output Power Low current: 110 mA typical @ P OUT = +20 dBm Ultra low quiescent current: 28 mA Digital Enable for direct interface to standard CMOS processors Mode-control for easy switching between standard and EDR modes Gain: 29 dB 3.3 V single supply operation
Ordering Information
SE2425U 3 x 3 x 0.5 mm QFN Sample SE2425U-R 3 x 3 x 0.5 mm QFN Tape & Reel SE2425U-EK1 N/A Evaluation Kit Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the SE2425U is designed for 2.4 GHz wireless applications, including Bluetooth TM Class 1 basic rate and enhanced data rate applications. It delivers +25 dBm output power in standard rate GFSK mode and +19.5 dBm output power in enhanced rate 8DPSK. The SE2425U provides a digital mode control input for boosting the linear performance for enhanced data rate applications. The SE2425U operates at 3.3 V DC with a peak efficiency of 43 % in basic rate and 21 % in enhanced rate mode. The internal bias management allows the part to only draw 28 mA in Class 2 output power levels. Output match integrates the high Q inductors to reduce component count and bill of materials. It uses two external capacitors to allow for varying loads, such as switches and filters, in different applications. The silicon/silicon-germanium structure of the SE2425U, and its exposed die-pad package, soldered to the system PCB, provide high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent. Functional Block Diagram Input Match Inter- Stage Match EN ( 4 ) MODE ( 5 ) VCC0 ( 2 ) RF IN ( 1 ) RF OUT ( 7 ) GND ( Paddle ) Inter- Stage Match Digital Bias & Enable Logic VCC2 ( 15 ) VCC1 ( 16 ) VCC3 ( 14 ) SiGe SE2425U Figure 1: SE2425U Block Diagram
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information 165-DST-01 Rev 1.3 Apr-05-2006 Confidential 2 of 10 QA040506 Pin-Out Diagram RFOUT SE2425U Top View VCC0 N/C EN RFIN N/C CAP N/C N/C VCC3 N/C VCC2 VCC1 N/C N/C MODE GND Pad Figure 2: SE2425U Pin-Out Pin Out Description Pin No. Name Description
1 RF IN Power amplifier RF input, DC blocking is required
2 V CCO Bias Power Supply
3 N/C Do Not Connect
4 EN PA Enable
5 MODE Mode switch
6 N/C Do Not Connect
7 RF OUT RF output
Note: Requires external DC blocking and optional shunt capacitor (typically 0p75 0402)
8 N/C Do Not Connect
9 N/C Do Not Connect
10 CAP Matching capacitor (typically 1p3 0402)
11 N/C Do Not Connect
12 N/C Do Not Connect
13 N/C Do Not Connect
14 V CC3 Stage 3 collector supply voltage
15 V CC2 Stage 2 collector supply voltage
16 V CC1 Stage 1 collector supply voltage
GND Pad GND Heat slug Ground Pad
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information 165-DST-01 Rev 1.3 Apr-05-2006 Confidential 3 of 10 QA040506 Absolute Maximum Ratings Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected workstations. Symbol Parameter Min. Max. Unit VCC Supply Voltage -0.3 +4.2 V VEN Enable Voltage -0.3 V CC V IN RF Input Power - 0 dBm TC Case Temperature Range -40 +85 °C TSTG Storage Temperature Range -40 +150 °C Tj Maximum Junction Temperature - +150 °C Conditions: V CC0 = V CC1 = V CC2 = V CC3 = 3.3 V, T C = 25 °C, f = 2.45 GHz, as measured on SiGe Semiconductor’s SE2425U-EV1 evaluation board unless otherwise noted. Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage 2.7 3.3 3.6 V Supply Current VMODE = Low, POUT = 20 dBm - 110 - mA Supply Current VMODE = Low, No RF - 28 - mA Supply Current VMODE = High, No RF - 81 - mA ICC Supply Current VMODE = High, POUT = 19.5 dBm - 123 - mA IEN Current sunk by EN pin (logic high) - - 1 µA IMODE Current sunk by MODE pin (logic high) - - 1 µA Logic High Voltage 2.0 2.8 3.3 V VLOGIC Logic Low Voltage 0 - 0.8 V Istdby Leakage Current when V EN = VMODE = 0 V, No RF - 1 10 µA
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information 165-DST-01 Rev 1.3 Apr-05-2006 Confidential 4 of 10 QA040506 Conditions: V EN = V CC0 = V CC1 = V CC2 = V CC3 = 3.3 V, V MODE = Low, P IN = -6 dBm, T C = 25 °C, f = 2.45 GHz, as measured on SiGe Semiconductor’s SE2425U-EV1 evaluation board, unless otherwise noted Standard Rate Mode Symbol Parameter Min. Typ. Max. Unit fL-U Frequency Range 2400 - 2500 MHz POUT_MAX Maximum Output Power (P IN = 0 dBm) - 25 - dBm ∆Ptemp Output Power variation over temperature G Gain @ PIN = -25 dBm Gain @ PIN = -6 dBm - 29.5 28.5 - dB GVAR Gain Variation over band (2400-2500 MHz) - 0.1 1.0 dB 2f - -40 - Harmonics - -41 - dBc IS11I - 10 - - dB IS21IOFF Isolation in “OFF” State, V EN = 0 V - 36 - dB IS12I Reverse Isolation - 42 - dB STAB Stability (P IN = -6 dBm, Load VSWR = 4:1) All non-harmonically related outputs less than -50 dBc Conditions: V EN = VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, VMODE = High, TC = 25 °C, f = 2.45 GHz, as measured on SiGe Semiconductor’s SE2425U-EV1 evaluation board, unless otherwise noted. Enhanced Rate Mode Symbol Parameter Min. Typ. Max. Unit POUT_MAX Output Power (Meets ACPR1/2 specification) - 19.5 - dBm ∆Ptemp Output Power variation over temperature (-40 °C < TA < +85 °C) for PIN=-15 dBm - 1.5 - dB G Gain @ P IN = -25 dBm - 30.5 - dB GVAR Gain Variation over band, P IN = -25 dBm - 0.1 - dB
2 Mbps, π/4-DQPSK, FC ± 2 MHz, BW = 1 MHz - - -20 dBm
3 Mbps, 8DPSK, FC ± 2 MHz, BW = 1 MHz - - -20 dBm
2 Mbps, π/4-DQPSK, FC ± 3 MHz, BW = 1 MHz - - -40 dBm
3 Mbps, 8DPSK, FC ± 3 MHz, BW = 1 MHz - - -40 dBm
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information 165-DST-01 Rev 1.3 Apr-05-2006 Confidential 7 of 10 QA040506 Harmonic Performance Test Conditions: V EN = V CC0 = V CC1 = V CC2 = V CC3 = 3.3 V, T C = 25 °C, f = 2.45 GHz, as measured on SiGe’s SE2425U-EV1 evaluation board otherwise noted 2nd Harmonics vs. Output Power over Mode -65 -60 -55 -50 -45 -40 -35 -30 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) Harmonic Level (dBc) Low Mode High Mode 3rd Harmonics vs. Output Power over Mode -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) Harmonic Level (dBc) Low Mode High Mode Figure 9: Typical Harmonic Performance Data in Low and High Mode (a) 2nd Harmonic Performance in Low and High Mode (b) 3rd Harmonic Performance in Low and High Mode
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information 165-DST-01 Rev 1.3 Apr-05-2006 Confidential 9 of 10 QA040506 This page intentionally left blank.
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information 165-DST-01 Rev 1.3 Apr-05-2006 Confidential 10 of 10 QA040506 http://www.sige.com Email: sales@sige.com Headquarters: Sales Locations:
1050 Morrison Drive, Suite 100 Hong Kong
Ottawa ON K2H 8K7 Canada Phone: +852 3428 7222 Fax: +852 3579 5450 Phone: +1 613 820 9244 San Diego Fax: +1 613 820 4933 Phone: +1 858 668 3541 Fax: +1 858 668 3546 United Kingdom Phone: +44 1264 850754 Fax: +44 1264 852601 Product Preview The datasheet contains information from the product concept specification. SiGe Semic onductor, Inc. reserves the right to chang e information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconduc tor, Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor, Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of p atents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise u nder any patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this pu blication are subject to change without notice. This publication supersedes and replaces all in formation previously supplied. SiGe Semiconductor, Inc. products are NOT authori zed for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor, Inc. RangeCharger TM , StreamCharger TM , and PointCharger TM are trademarks owned by SiGe Semiconductor, Inc. Copyright 2006 SiGe Semiconductor, Inc. All Rights Reserved