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Technical content

SOT-23 Plastic-Encapsulate MOSFETS N-Channel MOSFET

DESCRIPTION

The SE2310 uses advanced trench tec hnology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.

FEATURES

 High power and current handing capability  Lead free product is acquired  Surface mount package APPLICATION  Battery Switch  DC/DC Converter MARKING: S10 Maximum ratings (Ta=25℃ unless otherwise noted) l o b m y S r e t e m a r a P Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 3 A Pulsed Drain Current (note 1) I DM 10 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient (note 2) RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ WILLAS SE2310 WILLAS ELECTRONIC CORP.2013-10

Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA 60 V Zero gate voltage drain current I DSS VDS =60V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±100 nA Gate threshold voltage (note 3) V GS(th) VDS =VGS, ID =250µA 0.5 2 V VGS =10V, ID =3A 105 m Ω Drain-source on-resistance (note 3) R DS(on) VGS =4.5V, ID =3A 125 m Ω Forward tranconductance (note 3) g FS VDS =15V, ID =2A 1.4 S Diode forward voltage (note 3) V SD I S=3A, VGS = 0V 1.2 V DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss 247 pF Output Capacitance Coss 34 pF Reverse Transfer Capacitance C rss VDS =30V,VGS =0V,f =1MHz 19.5 pF SWITCHING CHARACTERISTICS (note 4) Turn-on delay time td(on) 6 ns t e m i t e s i r n o - n r u Tr 15 ns Turn-off delay time td(off) 15 ns t e m i t l l a f f f o - n r u Tf VGS=10V,VDD=30V, ID=1.5A,RGEN=1Ω 10 ns Q e g r a h C e t a G l a t o Tg 6 nC Gate-Source Charge Qgs 1 nC Gate-Drain Charge Qgd VDS =30V,VGS =4.5V,ID =3A 1.3 nC Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting. SE2310 WILLAS ELECTRONIC CORP.2013-10 SOT-23 Plastic-Encapsulate MOSFETS WILLAS

0.01 0.1 25 50 75 100 125 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 2 4 6 8 10 100 120 140 VGS =5V、4V、3.0V VGS=2.5V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) Pulsed VGS=2.0V GATE TO SOURCE VOLTAGE VGS (V) ON-RESISTANCE RDS(ON) (mΩ) ID=3A Ta=25℃ Pulsed VGS——RDS(ON) Typical Characteristics DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) VDS=5.0V Pulsed Ta=100℃ Ta=25℃ Transfer Characteristics SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) Ta=25℃ Pulsed VSDIS —— Output Characteristics THRESHOLD VOLTAGE VTH (V) JUNCTION TEMPERATURE TJ ( )℃ ID=250uA Threshold Voltage VGS=10V DRAIN CURRENT ID (A) ON-RESISTANCE RDS(ON) (mΩ) ID——RDS(ON) Ta=25℃ Pulsed VGS=4.5V 0.5 WILLAS ELECTRONIC CORP.2013-10 SE2310 SOT-23 Plastic-Encapsulate MOSFETS WILLAS

WILLAS ELECTRONIC CORP.2013-10 Ordering Information: Device PN Packing Note: 1. Packing code, T: Tape & 7” Reel Pakcing 2. RoHS product for packing code su ffix ”G”, Halogen free product for packing code suffix "H" . Part Number- Tape & Reel Packing :3000pcs/Reel WILLAS reserves the right to make changes without no ce to any product specifica on herein, to make correc ons, modifica ons, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifica ons and its informa on contained are intended to provide a product descrip on only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifica ons can and do vary in different applica ons and actual performance may vary over me. WILLAS does not assume any liability arising out of the applica on or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life-saving implant or other applica ons intended for life-sustaining or other related applica ons where a failure or malfunc on of component or circuitry may directly or indirectly cause injury or threaten a life without expressed wri en approval of WILLAS. Customers using or selling WILLAS components for use in such applica ons do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. T(1)G(2)‐WS SOT-23 Plastic-Encapsulate MOSFETS WILLAS