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SOT-23 Plastic-Encapsulate MOSFETS N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET
APPLICATIONS
z Load Switch for Portable Devices z DC/DC Converter MARKING: S6 Maximum ratings (at T A=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source voltage VDS 3 0 Gate-Source Voltage VGS ±20 V Continuous Drain Current (TJ=150℃)a,b ID 3.16 Pulsed Drain Current IDM 20 Continuous Source Current(Diode Conduction)a,b IS 0.62 A Maximum Power Dissipationa,b PD 0.75 W Operating Junction and Storage Temperature Range T J, Tstg -55 to150 ℃ Notes : a. Surface Mounted on 1” ×1” FR4 board, t≤5s. b. Pulse width limited by maximum junction temperature. SOT-23 1. GATE 2. SOURCE 3. DRAIN Thermal Resistance from Junction to Ambient (t≤5s) R θJA 100 ℃/W 2012-10 WILLAS ELECTRONIC CORP. SE2306 z Preliminary
Electrical characteristics (at TA=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DS VGS = 0V, ID =250µA 30 Gate-Threshold Voltage VGS(th) V DS =VGS, ID =250µA 1.0 3.0 V Gate-Body Leakage IGSS VDS =0V, VGS =±20V ±100 nA Zero Gate Voltage Drain Current IDSS V DS =30V, VGS =0V 0.5 µA VGS =10V, ID =3.5A 0.038 0.047 Drain-Source On-Resistancea R DS(on) VGS =4.5V, ID =2.8A 0.052 0.065 Ω Forward Transconductancea g fs VDS =4.5V, ID =2.5A 7.0 S Diode Forward Voltage VSD I S=1.25A,VGS=0V 0.8 1.2 V Dynamic Gate Charge Qg V DS =15V,VGS =5V,ID =2.5A 3.0 4.5 Total Gate Charge Qgt 6 9 Gate-Source Charge Qgs 1.6 Gate-Drain Charge Qgd VDS =15V,VGS =10V,ID =2.5A 0.6 nC Gate Resistance Rg f =1.0MHz 2.5 5 7.5 Ω Input Capacitance Ciss 305 Output Capacitance Coss 65 Reverse Transfer Capacitance Crss VDS =15V,VGS =0V,f =1MHz pF Switching Turn-On Delay Time td(on) 7 11 Rise Time tr 12 18 Turn-Off Delay Time td(off) 14 25 Fall Time tf VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω 6 10 ns Notes : a.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE2306 Preliminary
Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE2306 Preliminary