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SOT-23 Plastic-Encapsulate MOSFETS P-Channel 8-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET

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z Load Switch for Portable Devices z DC/DC Converter MARKING: S5 Maximum ratings (T a=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -8 Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -4.1 Continuous Source-Drain Diode Current IS -0.8 A Maximum Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient(t≤10s) R θJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature TSTG -50 ~+150 SOT-23 1. GATE 2. SOURCE 3. DRAIN 2012-10 WILLAS ELECTRONIC CORP. SE2305 z

Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -8 Gate-source threshold voltage VGS(th) V DS =VGS, ID =-250µA -0.5 -0.9 V Gate-source leakage IGSS V DS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS V DS =-8V, VGS =0V -1 µA VGS =-4.5V, ID =-3.5A 0.045 VGS =-2.5V, ID =-3A 0.060 Drain-source on-state resistancea R DS(on) VGS =-1.8V,ID=-2.0A 0.090 Ω Forward transconductancea g fs VDS =-5V, ID =-4.1A 6 S Dynamic Input capacitanceb,c Ciss 740 Output capacitanceb,c Coss 290 Reverse transfer capacitanceb,c Crss VDS =-4V,VGS =0V,f =1MHz 190 pF VDS =-4V,VGS =-4.5V, ID =-4.1A 7.8 15 Total gate chargeb Q g 4.5 9 Gate-source chargeb Qgs 1.2 Gate-drain chargeb Q gd VDS =-4V,VGS =-2.5V, ID =-4.1A 1.6 nC Gate resistanceb,c Rg f =1MHz 1.4 7 14 Ω Turn-on delay timeb,c td(on) 13 20 Rise timeb,c t r 35 53 Turn-off Delay timeb,c t d(off) 32 48 Fall timeb,c t f VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-4.5V,Rg=1Ω 10 20 Turn-on delay timeb,c td(on) 5 10 Rise timeb,c t r 11 17 Turn-off delay timeb,c t d(off) 22 33 Fall timeb,c t f VDD=-4V, RL=1.2Ω, ID ≈-3.3A, VGEN=-8V,Rg=1Ω 16 24 ns Drain-source body diode characteristics Continuous source-drain diode current I S TC=25℃ -1.4 Pulse diode forward currenta I SM -10 A Body ciode voltage VSD I F=-3.3A -0.8 -1.2 V Note : a. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing. c. These parameters have no way to verify. 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE2305

-0.1 -10 -0 -1 -2 -3 -4 -12 -16 -0 -3 -6 -9 -12 120 180 240 300 -0 -2 -4 -6 -8 100 200 300 400 500 Ta=25℃ Pulsed Ta=25℃ Pulsed Transfer Characteristics DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) Ta=25℃ Pulsed -20 -0.3 VSDIS —— SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) VGS=-2.0V VGS=-1.5V Output Characteristics DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) Typical Characteristics VGS=-1.8V VGS=-2.5V VGS=-4.5V ON-RESISTANCE RDS(ON) (mΩ) DRAIN CURRENT ID (A) Ta=25℃ Pulsed Ta=25℃ Pulsed ID=-3.3A IDRDS(ON) —— VGSRDS(ON) —— ON-RESISTANCE RDS(ON) (mΩ) GATE TO SOURCE VOLTAGE VGS (V) 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE2305

Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE2305