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SOT-23 Plastic-Encapsulate MOSFETS P-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET

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z Load Switch for Portable Devices z DC/DC Converter MARKING: S3 Maximum ratings (T a=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS - 3 0 Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -1.9 Continuous Source-Drain Diode Current IS -0.83 A Maximum Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient(t≤5s) R θJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature TSTG -50 ~+150 SOT-23 1. GATE 2. SOURCE 3. DRAIN 2012-10 WILLAS ELECTRONIC CORP. SE2303 z

Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID =-250µA -30 Gate-Source Threshold Voltage V GS(th) V DS =VGS, ID =-250µA -1 -3 V Gate-Source Leakage IGSS V DS =0V, VGS =±20V ±100 nA Zero Gate Voltage Drain Current I DSS V DS =-30V, VGS =0V -1 µA VGS =-10V, ID =-1.9A 0.158 0.190 Drain-Source On-State Resistancea R DS(on) Ω Forward Transconductancea g fs VDS =-5V, ID =-1.9A 1 S Dynamicb Input Capacitance Ciss 155 Output Capacitance Coss 35 Reverse Transfer Capacitance Crss VDS =-15V,VGS =0V,f =1MHz pF VDS =-15V,VGS =-10V,ID =-1.9A 4 8 Total Gate Charge Qg 2 4 Gate-Source Charge Qgs 0.6 Gate-Drain Charge Qgd VDS =-15V,VGS =-4.5V,ID=-1.9A nC Gate Resistance Rg f =1MHz 1.7 8.5 17 Ω Turn-On Delay Time td(on) 4 8 Rise Time tr 11 18 Turn-Off Delay Time td(off) 11 18 Fall Time tf VDD=-15V, RL=10Ω, ID =-1.5A, VGEN=-10V,Rg=1Ω 8 16 Turn-On Delay Time td(on) 36 44 Rise Time tr 37 45 Turn-Off Delay Time td(off) 12 18 Fall Time tf VDD=-15V, RL=10Ω, ID =-1.5A, VGEN=-4.5V,Rg=1Ω 9 14 ns Drain-source Body diode characteristics Continuous Source-Drain Diode Current IS TC=25℃ -1.75 Pulse Diode Forward Currenta I SM -10 A Body Diode Voltage VSD I S=-1.5A -0.8 -1.2 V Notes : a. Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%. b. Guaranteed by design, not subject to production testing. 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE2303

-0 -1 -2 -3 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -0.1 -10 -0 -1 -2 -3 -4 -5 -12 -16 -20 100 150 200 250 300 100 200 300 400 500 Ta=25℃ Pulsed Ta=25℃ Pulsed Transfer Characteristics DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) Ta=25℃ Pulsed -0.3 VSDIS —— SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) -10V -8.0V -6.0V -4.5V -4.0V -3.5V VGS=-3.0V Output Characteristics DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) Ta=25℃ Pulsed Typical Characteristics VGS=-4.5V VGS=-10V ON-RESISTANCE RDS(ON) (mΩ) DRAIN CURRENT ID (A) Ta=25℃ Pulsed ID=-1.9A IDRDS(ON) —— VGSRDS(ON) —— ON-RESISTANCE RDS(ON) (mΩ) GATE TO SOURCE VOLTAGE VGS (V) 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE2303

Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE2303