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SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET SOT-23 FEATURE 1. GATE TrenchFET Power MOSFET 2. SOURCE 3. DRAIN APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: S1 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 Pulsed Drain Current IDM -10 Continuous Source-Drain Diode Current IS -0.72 A Maximum Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient(t 5s) R JA 357 ℃ /W Junction Temperature TJ 150 Storage Temperature T stg -55 ~+150 ℃ θ ≤ 2012-10 WILLAS ELECTRONIC CORP. z SE2301
Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 V Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 -1 Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA Drain-source on-state resistance RDS(on) Ω Forward transconductance a gfs VDS =-5V, ID =-2.8A 6.5 S Dynamicb Input capacitance Ciss VDS =-10V,VGS =0V,f =1MHz 405 pFOutput capacitance Coss 75 Reverse transfer capacitance Crss 55 Total gate charge Qg VDS =-10V,VGS =-4.5V,ID =-3A 5.5 10 nC VDS =-10V,VGS =-2.5V,ID =-3A 3.3 6 Gate-source charge Qgs 0.7 Gate-drain charge Qgd 1.3 Gate resistance Rg f =1MHz 6.0 Ω Turn-on delay time td(on) VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω 11 20 ns Rise time tr 35 60 Turn-off delay time td(off) 30 50 Fall time tf 10 20 Drain-source body diode characteristics Continuous source-drain diode current IS TC=25℃ -1.3 A Pulse diode forward current ISM -10 Body diode voltage VSD IS=-0.7A -0.8 -1.2 V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. a a 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE2301
-10 -0 -2 -4 -6 -8 -10 120 150 -0 -2 -4 -6 -8 100 150 200 250 -0 -1 -2 -3 -4 -10 -12 -14 -1E-3 -0.01 -0.1 Typical Characteristics Transfer Characteristics DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) RDS(ON) —— V GS VGS=-4.5V VGS=-2.5V RDS(ON) —— I D ON-RESISTANCE RDS(ON) (mΩ) DRAIN CURRENT ID (A) ID=-3.6A ON-RESISTANCE RDS(ON) (mΩ) GATE TO SOURCE VOLTAGE VGS (V) -0.3 -3E-3 -0.03 Ta=25℃ Pulsed Ta=25℃ Pulsed Ta=25℃ Pulsed Ta=25℃ Pulsed Ta=25℃ Pulsed Output Characteristics VGS= -4.0V,-3.5V,-3.0V,-2.5V VGS=-2.0V VGS=-1.5V VGS=-1.0V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) IS —— V SD SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE2301
Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-10 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate MOSFETS SE2301